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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4148X-TPDIODE GEN PURP 75V 150MA SOD523 Micro Commercial Co |
3,081 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 75 V | 150mA | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
S380YDIODE GEN PURP 1.6KV 380A DO205 GeneSiC Semiconductor |
3,855 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 1600 V | 1600 V | 380A | -60°C ~ 180°C | 1.2 V @ 380 A | |
|
1SS400SMT2RDIODE GEN PURP 80V 100MA EMD2 Rohm Semiconductor |
3,407 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 0.5V, 1MHz | 4 ns | 100 nA @ 80 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
150KR60ADIODE GEN PURP 600V 150A DO205AA GeneSiC Semiconductor |
3,788 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 35 mA @ 600 V | 600 V | 150A | -40°C ~ 200°C | 1.33 V @ 150 A | |
|
RB521S30T1GDIODE SCHOTTKY 30V 200MA SOD523 onsemi |
2,722 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 30 µA @ 10 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 500 mV @ 200 mA | |
|
GB02SHT01-46DIODE SCHOTTKY 100V 4A GeneSiC Semiconductor |
2,074 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 100 V | 100 V | 4A (DC) | -55°C ~ 210°C | 1.6 V @ 1 A | |
|
1N5621DIODE GEN PURP 800V 2A AXIAL Semtech Corporation |
3,564 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 300 ns | 500 nA @ 800 V | 800 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
1N5194DIODE GEN PURP 70V 200MA DO35 Microchip Technology |
2,052 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
UFS120JE3/TR13DIODE GEN PURP 200V 1A DO214BA Microchip Technology |
3,567 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 950 mV @ 1 A | |
|
JAN1N5614US/TRSTD RECTIFIER Microchip Technology |
3,680 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
VS-16FL80S05DIODE GEN PURP 800V 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,697 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 800 V | 800 V | 16A | -65°C ~ 150°C | 1.4 V @ 16 A | |
|
BYWB29-100HE3_A/IDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,447 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 100 V | 100 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N5622DIODE GEN PURP 1KV 2A AXIAL Semtech Corporation |
2,141 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 23pF @ 5V, 1MHz | 2 µs | 500 nA @ 1000 V | 1000 V | 2A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5195DIODE GEN PURP 180V 200MA DO35 Microchip Technology |
2,366 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 180 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
MBRB10H60HE3_B/IDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,405 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A |
|
|
JAN1N5615US/TRRECTIFIER UFR,FRR Microchip Technology |
3,928 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 500 µA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 800 mV @ 3 A | |
|
|
VS-12FLR10S02DIODE GEN PURP 100V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,427 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
BYWB29-150HE3_A/IDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,348 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N5623DIODE GEN PURP 1KV 2A AXIAL Semtech Corporation |
2,461 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 500 ns | 500 nA @ 1000 V | 1000 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
1N5195URDIODE GEN PURP 180V 200MA DO213 Microchip Technology |
2,262 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 25 nA @ 180 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA |
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