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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-41HFR60DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,616 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 600 V | 600 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
DLA20IM800PC-TRLDIODE GEN PURP 800V 20A TO263 IXYS |
2,031 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 800 V | 800 V | 20A | -55°C ~ 175°C | 1.2 V @ 20 A | |
|
1N6627US/TRRECTIFIER UFR,FRR Microchip Technology |
2,309 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 440 V | 440 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | ||
|
JANTX1N6643UDIODE GEN PURP 50V 300MA B-MELF Microchip Technology |
3,451 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 500 nA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
FESB8JTHE3_A/PDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,329 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
VS-25F40MDIODE GEN PURP 400V 25A DO203AA Vishay General Semiconductor - Diodes Division |
3,293 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
|
JANTX1N5615USZENER DIODE Microchip Technology |
3,479 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | - | 200 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | ||
|
|
VS-10ETF06S-M3DIODE GEN PURP 600V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,514 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
VS-85HFR100DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,134 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
1N6858-1SCHOTTKY RECTIFIER Microchip Technology |
3,128 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UGB8HTHE3_A/PDIODE GEN PURP 500V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,239 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 30 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A |
|
|
VS-25F60MDIODE GEN PURP 600V 25A DO203AA Vishay General Semiconductor - Diodes Division |
3,811 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 600 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
JAN1N5419US/TRRECTIFIER UFR,FRR Microchip Technology |
2,339 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
|
VS-10ETF12S-M3DIODE GEN PURP 1.2KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,262 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 310 ns | 100 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
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|
BAS521,315DIODE GEN PURP 300V 250MA SOD523 Nexperia USA Inc. |
2,906 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 150 nA @ 250 V | 300 V | 250mA (DC) | 150°C (Max) | 1.1 V @ 100 mA | |
|
|
1N914B_NLDIODE ZENER Rochester Electronics, LLC |
3,436 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -55°C ~ 175°C | 1 V @ 100 mA | |
|
|
BAS521,135DIODE GEN PURP 300V 250MA SOD523 Nexperia USA Inc. |
2,464 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 150 nA @ 250 V | 300 V | 250mA (DC) | 150°C (Max) | 1.1 V @ 100 mA | |
|
BAS16/CH235RECTIFIER DIODE, 0.215A, 100V Rochester Electronics, LLC |
2,013 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
BAS521,115DIODE GEN PURP 300V 250MA SOD523 Nexperia USA Inc. |
2,673 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 150 nA @ 250 V | 300 V | 250mA (DC) | 150°C (Max) | 1.1 V @ 100 mA | |
|
|
BAS21/ZL215BAS21 - RECTIFIER DIODE Rochester Electronics, LLC |
3,323 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
