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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DSS10-01ADIODE SCHOTTKY 100V 10A TO220AC IXYS |
2,006 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 840 mV @ 10 A | |
|
GF1M-E3/67ADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,213 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
DPG10I200PADIODE GEN PURP 200V 10A TO220AC IXYS |
2,046 | - |
RFQ |
Scheda tecnica |
Tube | HiPerFRED™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 1 µA @ 200 V | 200 V | 10A | -55°C ~ 175°C | 1.27 V @ 10 A |
|
RS3K-E3/9ATDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,594 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
BYC30X-600PSQWEEN'S 5TH GENERATION HYPER FAST WeEn Semiconductors |
2,830 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 10 µA @ 600 V | 600 V | 30A | 175°C | 2.75 V @ 30 A | ||
|
STPS5H100AFDIODE SCHOTTKY 100V 5A SOD128 STMicroelectronics |
2,369 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3.5 µA @ 100 V | 100 V | 5A | 175°C (Max) | 760 mV @ 5 A | |
|
|
GE1302RECTIFIER DIODE, 6A, 100V Rochester Electronics, LLC |
3,357 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 975 mV @ 2 A | |
|
SBR3U20SA-13DIODE SBR 20V 3A SMA Diodes Incorporated |
3,674 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | SBR® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Super Barrier | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -65°C ~ 150°C | 390 mV @ 3 A |
|
HVM15DIODE GEN PURP 15000V 350MA HVM Rectron USA |
2,302 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 15000 V | 15000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
DFLS1150Q-7DIODE SCHOTTKY 150V POWERDI123 Diodes Incorporated |
2,486 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 28pF @ 5V, 1MHz | - | - | 150 V | 1A | -55°C ~ 175°C | 820 mV @ 1 A |
|
|
RURDG1520ULTRAFAST DIODE Rochester Electronics, LLC |
3,525 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
ZHCS750TADIODE SCHOTTKY 40V 750MA SOT23-3 Diodes Incorporated |
2,166 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 25V, 1MHz | 12 ns | 100 µA @ 30 V | 40 V | 750mA (DC) | 125°C (Max) | 490 mV @ 750 mA | |
|
|
MBR3045_T0_0000130 AMPERS SCHOTTKY BARRIER RECTI Panjit International Inc. |
2,254 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A | ||
|
|
ES3CB-13-FDIODE GEN PURP 150V 3A SMB Diodes Incorporated |
2,772 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
PCDD0665G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
3,097 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 228pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | ||
|
SB540-E3/73DIODE SCHOTTKY 40V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,172 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
|
PCDB0665G1_T0_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,568 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 228pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | ||
|
|
SSC54-E3/9ATDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,322 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A | |
|
|
STBR3008G2Y-TRDIODE GEN PURP STMicroelectronics |
2,909 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 2 µA @ 800 V | 800 V | 30A | -40°C ~ 175°C | 1.1 V @ 30 A | |
|
ES3CDIODE GEN PURP 150V 3A SMC onsemi |
2,580 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 150 V | 150 V | 3A | -50°C ~ 150°C | 950 mV @ 3 A |
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