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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S6MDIODE GEN PURP 1KV 6A DO4 GeneSiC Semiconductor |
3,535 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6MRDIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
2,926 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
|
S6QDIODE GEN PURP 1.2KV 6A DO4 GeneSiC Semiconductor |
2,604 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1200 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
S6QRDIODE GEN PURP REV 1.2KV 6A DO4 GeneSiC Semiconductor |
3,464 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1200 V | 6A | -65°C ~ 175°C | 1.1 V @ 6 A | |
|
1N3673ARDIODE GEN PURP REV 1KV 12A DO4 GeneSiC Semiconductor |
3,469 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 12A | -65°C ~ 200°C | 1.1 V @ 12 A | |
|
|
1N1202ARDIODE GEN PURP REV 200V 12A DO5 GeneSiC Semiconductor |
3,646 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 12A | -65°C ~ 200°C | 1.1 V @ 12 A | |
|
GC50MPS06-247SIC DIODE 650V 50A TO-247-2 GeneSiC Semiconductor |
2,246 | - |
RFQ |
Scheda tecnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 650 V | 50A (DC) | 175°C (Max) | - |
|
|
GB10MPS17-247SIC DIODE 1700V 10A TO-247-2 GeneSiC Semiconductor |
3,402 | - |
RFQ |
Scheda tecnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Through Hole | 669pF @ 1V, 1MHz | 0 ns | 12 µA @ 1700 V | 1700 V | 50A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
GB25MPS17-247SIC DIODE 1700V 25A TO-247-2 GeneSiC Semiconductor |
3,033 | - |
RFQ |
Scheda tecnica |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1596pF @ 1V, 1MHz | 0 ns | 30 µA @ 1700 V | 1700 V | 110A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A |
|
|
1N3890DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor |
3,863 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 100 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
1N3893DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor |
2,926 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 600 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
FR12B05DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor |
2,295 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 100 V | 12A | -65°C ~ 150°C | 800 mV @ 12 A | |
|
|
FR12D05DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor |
2,038 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 200 V | 12A | -65°C ~ 150°C | 800 mV @ 12 A | |
|
FR12G05DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor |
3,773 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 400 V | 12A | -65°C ~ 150°C | 800 mV @ 12 A | |
|
|
FR12J05DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor |
2,611 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 600 V | 12A | -65°C ~ 150°C | 800 mV @ 12 A | |
|
|
S70YDIODE GEN PURP 1.6KV 70A DO5 GeneSiC Semiconductor |
3,660 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1600 V | 70A | -65°C ~ 150°C | 1.1 V @ 70 A | |
|
|
S70YRDIODE GEN PURP REV 1.6KV 70A DO5 GeneSiC Semiconductor |
3,425 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1600 V | 70A | -65°C ~ 150°C | 1.1 V @ 70 A | |
|
|
S16BDIODE GEN PURP 100V 16A DO203AA GeneSiC Semiconductor |
2,793 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
|
S16BRDIODE GEN PURP 100V 16A DO220AA GeneSiC Semiconductor |
2,748 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 100 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A | |
|
|
S16DDIODE GEN PURP 200V 16A DO203AA GeneSiC Semiconductor |
3,943 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 16A | -65°C ~ 175°C | 1.1 V @ 16 A |
- 1500+ Media giornaliera RFQ
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