Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N1200AR

1N1200AR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
2,831 -

RFQ

1N1200AR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1202A

1N1202A

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
3,672 -

RFQ

1N1202A

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1204A

1N1204A

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
2,285 -

RFQ

1N1204A

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1204AR

1N1204AR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor
2,374 -

RFQ

1N1204AR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N3671A

1N3671A

DIODE GEN PURP 800V 12A DO4

GeneSiC Semiconductor
2,537 -

RFQ

1N3671A

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 200°C 1.1 V @ 12 A
S12BR

S12BR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
2,835 -

RFQ

S12BR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12D

S12D

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
3,039 -

RFQ

S12D

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12DR

S12DR

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor
2,220 -

RFQ

S12DR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12G

S12G

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
2,822 -

RFQ

S12G

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12GR

S12GR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor
3,640 -

RFQ

S12GR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12J

S12J

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
3,758 -

RFQ

S12J

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12JR

S12JR

DIODE GEN PURP REV 600V 12A DO4

GeneSiC Semiconductor
2,643 -

RFQ

S12JR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12K

S12K

DIODE GEN PURP 800V 12A DO4

GeneSiC Semiconductor
2,390 -

RFQ

S12K

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12KR

S12KR

DIODE GEN PURP REV 800V 12A DO4

GeneSiC Semiconductor
3,622 -

RFQ

S12KR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12M

S12M

DIODE GEN PURP 1000V 12A DO4

GeneSiC Semiconductor
3,318 -

RFQ

S12M

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12MR

S12MR

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor
3,677 -

RFQ

S12MR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12Q

S12Q

DIODE GEN PURP 1200V 12A DO4

GeneSiC Semiconductor
3,134 -

RFQ

S12Q

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12QR

S12QR

DIODE GEN PURP REV 1.2KV 12A DO4

GeneSiC Semiconductor
2,452 -

RFQ

S12QR

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
1N3890R

1N3890R

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
3,415 -

RFQ

1N3890R

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
1N3891R

1N3891R

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor
2,144 -

RFQ

1N3891R

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 200 V 12A -65°C ~ 150°C 1.4 V @ 12 A
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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