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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UFS370J/TR13DIODE GEN PURP 700V 3A DO214AB Microchip Technology |
3,442 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 700 V | 700 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
JTXV1N6642300MA ULTRA FAST 100V Semtech Corporation |
3,270 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-45APS08L-M3NEW INPUT DIODES - TO-247 Vishay General Semiconductor - Diodes Division |
2,026 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 45A | -40°C ~ 150°C | 1.14 V @ 45 A | |
|
|
JAN1N3646DIODE GP 1.75KV 250MA AXIAL Microchip Technology |
2,317 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1750 V | 1750 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA |
|
|
JANTXV1N4246D MET 1A STD 400V Semtech Corporation |
3,506 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 400 V | 400 V | 1A (DC) | - | 1.2 V @ 1 A |
|
|
USD245RECTIFIER Microchip Technology |
2,581 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
UFS380J/TR13DIODE GEN PURP 800V 3A DO214AB Microchip Technology |
2,388 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
JTXV1N6643300MA ULTRA FAST 75V Semtech Corporation |
2,194 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
FFSB0465A650V 4A SIC SBD onsemi |
3,808 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 258pF @ 1V, 100kHz | 0 ns | 200 mA @ 650 V | 650 V | 7.7A (DC) | -55°C ~ 175°C | 1.75 V @ 4 A | |
|
|
JANTX1N6073DIODE GEN PURP 50V 850MA AXIAL Microchip Technology |
2,457 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A |
|
|
JANTXV1N4247D MET 1A STD 600V Semtech Corporation |
2,861 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 1A (DC) | - | 1.2 V @ 1 A |
|
FFSH15120A1200V 15A SIC SBD onsemi |
3,029 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 936pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 26A (DC) | -55°C ~ 175°C | 1.75 V @ 15 A | |
|
CDBU0130-HFDIODE SCHOTTKY 30V 100MA 0603 Comchip Technology |
3,898 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 9pF @ 10V, 1MHz | - | 30 µA @ 30 V | 30 V | 100mA | 125°C (Max) | 440 mV @ 100 mA | |
|
VS-40HF100DIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,662 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
SS115HM2GDIODE SCHOTTKY 150V 1A DO214AC Taiwan Semiconductor Corporation |
2,402 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A |
|
|
VS-70HFR40DIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,205 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 15 mA @ 400 V | 400 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
BAS70E6433HTMA1DIODE SCHOTTKY 70V 70MA SOT23-3 Infineon Technologies |
2,316 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
MSC050SDA070SGEN2 SIC SBD 700V 50A D3PAK Microchip Technology |
3,372 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2034pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 88A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |
|
RS1B-E3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,375 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CVFD20065ADIODE SCHKY SIC 650V 20A TO-220 Wolfspeed, Inc. |
3,926 | - |
RFQ |
Scheda tecnica |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Through Hole | 1100pF @ 0V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 57A (DC) | -55°C ~ 175°C | 1.45 V @ 20 A |
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