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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-20ETF12-M3DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,311 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
VS-T70HFL20S02DIODE GEN PURP 200V 70A D-55 Vishay General Semiconductor - Diodes Division |
2,865 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 70A | - | - | |
|
PCFFS40120AFDIODE SCHOTTKY 1200V 40A DIE onsemi |
2,896 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2250pf @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 61A (DC) | -55°C ~ 175°C | 1.75 V @ 40 A | ||
|
|
JANTXV1N5620D MET 1A STD 800V HRV Semtech Corporation |
2,546 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
PMEG3005EJFDIODE SCHOTTKY 30V 500MA SC90 Nexperia USA Inc. |
3,765 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 55pF @ 1V, 1MHz | - | 150 µA @ 30 V | 30 V | 500mA (DC) | 150°C (Max) | 430 mV @ 500 mA | ||
|
|
JAN1N5553D MET 3A STD 800V Semtech Corporation |
2,045 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 92pF @ 5V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 5A | - | 1 V @ 3 A |
|
DSA300I200NADIODE SCHOTTKY 200V 300A SOT227B IXYS |
2,230 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 2220pF @ 24V, 1MHz | - | 3 mA @ 200 V | 200 V | 300A | - | 1.03 V @ 300 A | |
|
|
PMEG6010CEJFDIODE SCHOTTKY 60V 1A SC90 Nexperia USA Inc. |
3,856 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 1V, 1MHz | - | 50 µA @ 60 V | 60 V | 1A (DC) | 150°C (Max) | 660 mV @ 1 A | |
|
|
CD647SIGNAL/COMPUTER DIODE Microchip Technology |
2,588 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | - | 50 nA @ 400 V | 480 V | 400mA | -65°C ~ 175°C | 1 V @ 100 mA | ||
|
VS-243NQ100PBFDIODE SCHOTTKY 100V 240A D-67 Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 5500pF @ 5V, 1MHz | - | 6 mA @ 100 V | 100 V | 240A | -55°C ~ 175°C | 950 mV @ 240 A | |
|
|
FR70JR02DIODE GEN PURP REV 600V 70A DO5 GeneSiC Semiconductor |
2,802 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 250 ns | 25 µA @ 100 V | 600 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
VS-20ETF02-M3DIODE GEN PURP 200V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,248 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
FFSH40120A1200V 40A SIC SBD onsemi |
2,833 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2250pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 61A (DC) | -55°C ~ 175°C | - | |
|
|
JANTXV1N5621D MET 1A FAST 800V HRV Semtech Corporation |
3,423 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JAN1N5554D MET 3A STD 1KV Semtech Corporation |
2,615 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 92pF @ 5V, 1MHz | 2 µs | 1 µA @ 1 V | 1 V | 5A | - | 1 V @ 3 A |
|
STPSC12065DDIODE SCHOTTKY 650V 12A TO220AC STMicroelectronics |
2,806 | - |
RFQ |
Scheda tecnica |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 750pF @ 0V, 1MHz | 0 ns | 150 µA @ 650 V | 650 V | 12A | -40°C ~ 175°C | 1.45 V @ 12 A |
|
|
FR70JR05DIODE GEN PURP REV 600V 70A DO5 GeneSiC Semiconductor |
2,185 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 100 V | 600 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
|
VS-20ETF08-M3DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,505 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
1N5829DIODE SCHOTTKY 20V 25A DO4 GeneSiC Semiconductor |
3,971 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | - | - | 2 mA @ 20 V | 20 V | 25A | -55°C ~ 150°C | 580 mV @ 25 A | |
|
|
JANTXV1N5622D MET 1A STD 1KV HRV Semtech Corporation |
2,341 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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