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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYV27-050-TRDIODE AVALANCHE 55V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,643 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 25 ns | 1 µA @ 55 V | 55 V | 2A | -55°C ~ 175°C | 1.07 V @ 3 A | |
|
BYM10-1000HE3/97DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,610 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
SS8P2LHM3_A/IDIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 20 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
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SJPL-L2VRDIODE GEN PURP 200V 3A SJP Sanken |
3,781 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 980 mV @ 3 A | |
|
|
RGL41DHE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
RL 10ZVDIODE GEN PURP 200V 2A AXIAL Sanken |
3,343 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 50 µA @ 200 V | 200 V | 2A | -40°C ~ 150°C | 980 mV @ 2 A | |
|
|
SF4001-TAPDIODE AVAL 1A 50V SOD-57 Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 30 V | 50 V | 1A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
BYM10-100HE3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,491 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SS35HE3_B/HDIODE SCHOTTKY 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,143 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A |
|
|
SS8P3LHM3_A/HDIODE SCHOTTKY 30V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,242 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
|
V10WL45-M3/IDIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
2,796 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.7 mA @ 45 V | 45 V | 10A | -40°C ~ 150°C | 570 mV @ 10 A | |
|
HER302GDIODE GEN PURP 3A 100V DO-201AD Taiwan Semiconductor Corporation |
3,533 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | ||
|
HERAF1008GDIODE GEN PURP 10A 1000V IT0-220 Taiwan Semiconductor Corporation |
3,276 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 1000 V | 1000 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | ||
|
ISL9R860S3STRECTIFIER DIODE, AVALANCHE, 8A, Rochester Electronics, LLC |
3,780 | - |
RFQ |
Scheda tecnica |
Bulk | Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 100 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 2.4 V @ 8 A |
|
|
BAT43X RSDIODE SCHOTTKY SOD-523F Taiwan Semiconductor Corporation |
3,072 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 200 mA | ||
|
|
SS36-001HE3_B/IDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,023 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
V20WL45-M3/IDIODE SCHOTTKY 20A 45V DPAK Vishay General Semiconductor - Diodes Division |
2,896 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 4 mA @ 45 V | 45 V | 20A | -40°C ~ 150°C | 620 mV @ 20 A | |
|
|
SF37GHDIODE GEN PURP 3A 500V DO-201AD Taiwan Semiconductor Corporation |
2,412 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 3A (DC) | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
|
HERAF1006GDIODE GEN PURP 10A 600V IT0-220A Taiwan Semiconductor Corporation |
3,372 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.7 V @ 10 A | ||
|
BAS16,215NEXPERIA BAS16 - RECTIFIER DIODE Rochester Electronics, LLC |
3,625 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101, BAS16 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA |
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