Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
AS3PM-M3/87A

AS3PM-M3/87A

DIODE AVALANCHE 1KV 2.1A TO277

Vishay General Semiconductor - Diodes Division
2,219 -

RFQ

AS3PM-M3/87A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 1000 V 1000 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
MURS460-M3/I

MURS460-M3/I

4A 600V 50NS FSMC UF RECT SMD

Vishay General Semiconductor - Diodes Division
3,227 -

RFQ

MURS460-M3/I

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 10 µA @ 600 V 600 V 2.4A -55°C ~ 175°C 1.25 V @ 3 A
EGL34CHE3_A/H

EGL34CHE3_A/H

DIODE GEN PURP 150V 500MA DO213

Vishay General Semiconductor - Diodes Division
3,477 -

RFQ

EGL34CHE3_A/H

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 150 V 150 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
BYT51D-TAP

BYT51D-TAP

DIODE AVALANCHE 200V 1.5A SOD57

Vishay General Semiconductor - Diodes Division
3,705 -

RFQ

BYT51D-TAP

Scheda tecnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 200 V 200 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
SK83C V6G

SK83C V6G

DIODE SCHOTTKY 8A 30V DO-214AB

Taiwan Semiconductor Corporation
2,092 -

RFQ

SK83C V6G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 8A -55°C ~ 125°C -
ES2G M4G

ES2G M4G

DIODE GEN PURP 400V 2A DO214AA

Taiwan Semiconductor Corporation
3,345 -

RFQ

ES2G M4G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
AS4PD-M3/87A

AS4PD-M3/87A

DIODE AVALANCHE 200V 2.4A TO277A

Vishay General Semiconductor - Diodes Division
2,450 -

RFQ

AS4PD-M3/87A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 60pF @ 4V, 1MHz 1.8 µs 10 µA @ 200 V 200 V 2.4A (DC) -55°C ~ 175°C 962 mV @ 2 A
EG01C

EG01C

DIODE GEN PURP 1KV 500MA AXIAL

Sanken
2,216 -

RFQ

EG01C

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 50 µA @ 1000 V 1000 V 500mA -40°C ~ 150°C 3.3 V @ 500 mA
EGL34DHE3_A/H

EGL34DHE3_A/H

DIODE GEN PURP 200V 500MA DO213

Vishay General Semiconductor - Diodes Division
3,731 -

RFQ

EGL34DHE3_A/H

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 500mA -65°C ~ 175°C 1.25 V @ 500 mA
BYT52A-TAP

BYT52A-TAP

DIODE AVALANCHE 50V 1.4A SOD57

Vishay General Semiconductor - Diodes Division
2,005 -

RFQ

BYT52A-TAP

Scheda tecnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 50 V 50 V 1.4A -55°C ~ 175°C 1.3 V @ 1 A
SK84C V6G

SK84C V6G

DIODE SCHOTTKY 8A 40V DO-214AB

Taiwan Semiconductor Corporation
2,834 -

RFQ

SK84C V6G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 8A -55°C ~ 125°C -
ESH2B M4G

ESH2B M4G

DIODE GEN PURP 100V 2A DO214AA

Taiwan Semiconductor Corporation
2,156 -

RFQ

ESH2B M4G

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 20 ns 2 µA @ 100 V 100 V 2A -55°C ~ 175°C 900 mV @ 2 A
AS4PG-M3/87A

AS4PG-M3/87A

DIODE AVALANCHE 400V 2.4A TO277A

Vishay General Semiconductor - Diodes Division
2,275 -

RFQ

AS4PG-M3/87A

Scheda tecnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 60pF @ 4V, 1MHz 1.8 µs 10 µA @ 400 V 400 V 2.4A (DC) -55°C ~ 175°C 962 mV @ 2 A
EM2

EM2

DIODE GEN PURP 400V 1.2A AXIAL

Sanken
2,906 -

RFQ

EM2

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 400 V 400 V 1.2A -40°C ~ 150°C 920 mV @ 1.2 A
EGL34FHE3_A/H

EGL34FHE3_A/H

DIODE GEN PURP 300V 500MA DO213

Vishay General Semiconductor - Diodes Division
3,708 -

RFQ

EGL34FHE3_A/H

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 500mA -65°C ~ 175°C 1.35 V @ 500 mA
GFA00DN-L079-PRD

GFA00DN-L079-PRD

DIODE GENERAL PURPOSE

onsemi
3,022 -

RFQ

Bulk RoHS - - Last Time Buy - - - - - - - -
1N5398

1N5398

ST Rect, 800V, 1.5A

DComponents
2,437 -

RFQ

1N5398

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 5 µA @ 800 V 800 V 1.5A -50°C ~ 175°C 1.3 V @ 1.5 A
USL1D

USL1D

UF Rect, 200V, 1.00A, 50ns

DComponents
3,119 -

RFQ

USL1D

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 1 µA @ 200 V 200 V 1A -50°C ~ 150°C 1 V @ 1 A
DY3064S

DY3064S

DIODE

Diodes Incorporated
2,285 -

RFQ

Bulk RoHS - - Obsolete - - - - - - - -
MBR0540T1H

MBR0540T1H

DIODE SCHOTTKY

onsemi
2,069 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 20 µA @ 40 V 40 V 500mA -55°C ~ 150°C 510 mV @ 500 mA
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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