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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1A2GDIODE GP GLASS 100V 1A R-1 Rectron USA |
2,048 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
SD103AW-7-F-79DIODE SCHOTTKY 40V 350MA SOD123 Diodes Incorporated |
2,173 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 28pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | ||
|
SS520-HFDIODE SCHOTTKY 5A 200V SMA Comchip Technology |
3,635 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 1 mA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
TSSA5U50HE3G5A, 50V, TRENCH SCHOTTKY RECTIFI Taiwan Semiconductor Corporation |
2,060 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 300 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 540 mV @ 5 A |
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|
SS2P2HM3/85ADIODE SCHOTTKY 20V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,395 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
BY527TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 16pF @ 4V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.65 V @ 10 A | |
|
SB380EA-GDIODE SCHOTTKY 80V 3A DO201AD Comchip Technology |
3,785 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 250pF @ 4V, 1MHz | - | 500 µA @ 80 V | 80 V | 3A | -65°C ~ 150°C | 850 mV @ 3 A | |
|
ES3CHE3_A/IDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,542 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A |
|
|
S3KHDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,354 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
CMH01(TE12L,Q,M)DIODE GEN PURP 200V 3A M-FLAT Toshiba Semiconductor and Storage |
3,145 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 100 ns | 10 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 980 mV @ 3 A | |
|
|
SS2P2L-M3/85ADIODE SCHOTTKY 20V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,664 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 20 V | 20 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
BYT51D-TRDIODE AVALANCHE 200V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,887 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SB380E-GDIODE SCHOTTKY 80V 3A DO201AD Comchip Technology |
3,439 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 250pF @ 4V, 1MHz | - | 500 µA @ 80 V | 80 V | 3A | -65°C ~ 150°C | 850 mV @ 3 A | |
|
V8P15HM3/HDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,536 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
|
|
S3GHDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
2,364 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
DB2731400LDIODE SCHOTTKY 30V 30MA SSSMINI2 Panasonic Electronic Components |
2,103 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Discontinued at Digi-Key | Surface Mount | 1.5pF @ 10V, 1MHz | 1 ns | 300 nA @ 30 V | 30 V | 30mA (DC) | 125°C (Max) | 1 V @ 30 mA | ||
|
|
SS2P2-M3/85ADIODE SCHOTTKY 20V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,210 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 20 V | 20 V | 2A | - | 550 mV @ 2 A |
|
|
BYT52A-TRDIODE AVALANCHE 50V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,958 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 50 V | 50 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
AM01ZVDIODE GEN PURP 200V 1A AXIAL Sanken |
3,159 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
V8P15HM3/IDIODE SCHOTTKY 150V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 8A | -40°C ~ 150°C | 1.08 V @ 8 A |
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