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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-16F100DIODE GEN PURP 1KV 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,107 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 1000 V | 1000 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
VS-8EWF02STRR-M3DIODE GEN PURP 200V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,103 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 200 V | 200 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
JAN1N4249D MET 1A STD 800V Semtech Corporation |
2,191 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1 V | 1 V | 1A (DC) | - | 1.2 V @ 1 A |
|
JANTXV1N6628/TRRECTIFIER UFR,FRR Microchip Technology |
2,645 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 660 V | 660 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
MUR5020RDIODE GEN PURP REV 200V 50A DO5 GeneSiC Semiconductor |
2,653 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 200 V | 50A | -55°C ~ 150°C | 1 V @ 50 A | |
|
LSIC2SD065E40CCADIODE SCHOTTKY SIC 650V 20A DUAL Littelfuse Inc. |
3,329 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 960pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 45A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A |
|
SE15FD-M3/IDIODE GEN PURP 200V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
3,712 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A | |
|
F1857D1200DIODE GEN PURP 1.2KV 55A MODULE Sensata-Crydom |
3,023 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Chassis Mount | - | - | - | 1200 V | 55A (DC) | - | 1.4 V @ 165 A | |
|
|
SE15FG-M3/HDIODE GEN PURP 400V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
3,979 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A | |
|
D1600U45X122XPSA1DIODE GEN PURP D12026K-1 Infineon Technologies |
2,826 | - |
RFQ |
Scheda tecnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 4500 V | 4500 V | 1560A | 140°C (Max) | 4.3 V @ 2500 A | |
|
|
SE15FG-M3/IDIODE GEN PURP 400V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A | |
|
LS4448GS18DIODE GEN PURP 75V 150MA SOD80 Vishay General Semiconductor - Diodes Division |
2,495 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 75 V | 150mA | 175°C (Max) | 1 V @ 100 mA |
|
|
SE15FJ-M3/HDIODE GEN PURP 600V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A | |
|
S1J-HFRECTIFIER GEN PURP 600V 1A SMA Comchip Technology |
3,181 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SE15FJ-M3/IDIODE GEN PURP 600V 1.5A DO219AB Vishay General Semiconductor - Diodes Division |
3,972 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10.5pF @ 4V, 1MHz | 900 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.05 V @ 1.5 A | |
|
|
JANTX1N3612/TRHIGH VOLTAGE RECTIFIER Microchip Technology |
2,689 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
VS-8EWF04STRL-M3DIODE GEN PURP 400V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
JAN1N5614D MET 1A STD 200V Semtech Corporation |
3,207 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
PCFFS20120AFDIODE SCHOTTKY 20A 1200V DIE onsemi |
3,670 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.723 V @ 20 A | ||
|
|
MUR5040RDIODE GEN PURP REV 400V 50A DO5 GeneSiC Semiconductor |
2,728 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 400 V | 50A | -55°C ~ 150°C | 1 V @ 50 A |
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