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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S3D R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,820 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
S5G R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,024 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
MUR440S R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,661 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.25 V @ 4 A | ||
|
|
S8MC M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,233 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A (DC) | -55°C ~ 150°C | 985 mV @ 8 A | ||
|
SF65GHR0GDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
3,591 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A |
|
ES3F V6GDIODE GEN PURP 300V 3A DO214AB Taiwan Semiconductor Corporation |
2,784 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | - | |
|
STPS3L60SYDIODE SCHOTTKY 60V 3A SMC STMicroelectronics |
3,146 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Q Automotive | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 55 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 700 mV @ 3 A |
|
S3ABDIODE GEN PURP 50V 3A DO214AA onsemi |
6,440 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 0V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
V15P45S-M3/87ADIODE SCHOTTKY 15A 45V TO-277A Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 4.8A (DC) | -40°C ~ 150°C | 400 mV @ 5 A |
|
VS-STPS1045BTRR-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
3,452 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
SF66GHR0GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
3,127 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 150°C | 1.3 V @ 6 A |
|
|
MUR340S V6GDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
3,278 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | - | |
|
15SQ050DIODE SCHOTTKY 50V 15A R-6 SMC Diode Solutions |
3,009 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 nA @ 50 V | 50 V | 15A | -55°C ~ 150°C | 680 mV @ 15 A | |
|
S3ABDIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation |
3,212 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | ||
|
|
VS-10WQ045FNTRL-M3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
3,032 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
VS-STPS1045B-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
3,524 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
SF68GHR0GDIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 6A | -55°C ~ 150°C | 1.7 V @ 6 A |
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|
BYM13-50HE3/97DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,051 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
15SQ060DIODE SCHOTTKY 60V 15A R-6 SMC Diode Solutions |
2,682 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 nA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 680 mV @ 15 A | |
|
|
S3BBDIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A |
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