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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
V10P45HM3_A/HDIODE SCHOTTKY 45V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,979 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 45 V | 45 V | 10A (DC) | -40°C ~ 150°C | 570 mV @ 10 A |
|
|
AR4PG-M3/87ADIODE AVALANCHE 400V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,197 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 4 A |
|
|
AS3PDHM3_A/IDIODE AVALANCHE 200V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,046 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 200 V | 200 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
S5G R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,341 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
C2D05120E-TRDIODE SCHOTTKY 1.2KV 17.5A TO252 Wolfspeed, Inc. |
3,285 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Zero Recovery™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 455pF @ 0V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 17.5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
HS3K M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,403 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
BAV103/S500,115DIODE SWITCHING SOD80C NXP USA Inc. |
3,160 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
HS3F R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,593 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
BAT54/LF1RDIODE SCHOTTKY TO-236AB NXP USA Inc. |
2,482 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
MUR340S M6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.25 V @ 3 A | ||
|
|
BAT721C/ZLRDIODE SCHOTTKY TO-236AB NXP USA Inc. |
2,720 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
MUR320S M6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,698 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 25 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 875 mV @ 3 A | ||
|
|
PMEG3010BEA/ZLFDIODE SCHOTTKY SOD323 NXP USA Inc. |
3,333 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
SK54C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,570 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
|
PMEG3010BEA/ZLXDIODE SCHOTTKY SOD323 NXP USA Inc. |
2,849 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
S8GC M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,536 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A (DC) | -55°C ~ 150°C | 985 mV @ 8 A | ||
|
|
PMEG4030ER/BXDIODE SCHOTTKY 40V 3A SOD123W NXP USA Inc. |
2,133 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
ES3C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,056 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
BAS316/ZLFDIODE GEN PURP 100V 215MA SOD323 NXP USA Inc. |
2,880 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 1.5pF @ 0V, 1MHz | 4 ns | 500 nA @ 80 V | 100 V | 215mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | ||
|
|
RS3K R6DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
3,234 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A |
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