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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5285-1CURRENT REGULATOR DIODE Microchip Technology |
2,831 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
FR154G R0GDIODE GEN PURP 400V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,879 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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|
NSR01F30NXT5GDIODE SCHOTTKY 30V 100MA 2DSN onsemi |
3,839 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 5V, 1MHz | - | 50 µA @ 30 V | 30 V | 100mA (DC) | 125°C (Max) | 500 mV @ 100 mA | |
|
|
FR155G R0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,558 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
VS-85HF10MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
UES1003SMRECTIFIER Microchip Technology |
3,132 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
JAN1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
2,684 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
JAN1N5621D MET 1A FAST 800V Semtech Corporation |
2,026 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 300 ns | 500 nA @ 800 V | 800 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
1N5289-1CURRENT REGULATOR DIODE Microchip Technology |
2,078 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-85HF120MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,314 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
UES1301RECTIFIER Microchip Technology |
3,333 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | - | 50 V | 6A | -55°C ~ 175°C | 925 mV @ 6 A | ||
|
FFSB10120A-F0851200V 10A AUTO SIC SBD onsemi |
3,723 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 612pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 21A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A |
|
|
JAN1N5622D MET 1A STD 1KV Semtech Corporation |
2,616 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
1N5291-1CURRENT REGULATOR DIODE Microchip Technology |
3,909 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
VS-85HF20MDIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,700 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
JANTX1N5802URSDIODE GEN PURP 50V 1A APKG Microchip Technology |
2,773 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
JANTX1N5620/TRSTD RECTIFIER Microchip Technology |
2,763 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
|
JAN1N5623D MET 1A FAST 1KV HR Semtech Corporation |
3,495 | - |
RFQ |
Scheda tecnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 5V, 1MHz | 500 ns | 500 nA @ 1 V | 1 V | 2A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
1N5297-1CURRENT REGULATOR DIODE Microchip Technology |
3,187 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-85HF40MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A |
- 1500+ Media giornaliera RFQ
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- 15,000+ Magazzino in stock
