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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PDR5G-13DIODE GEN PURP 400V 5A POWERDI5 Diodes Incorporated |
5,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 3.3 µs | 10 µA @ 400 V | 400 V | 5A | -65°C ~ 150°C | 1.15 V @ 5 A | |
|
V25PL60-M3/86ADIODE SCHOTTKY 60V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
1,857 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 mA @ 60 V | 60 V | 5.5A | -40°C ~ 150°C | 630 mV @ 25 A |
|
BY448TAPDIODE AVALANCHE 1.5KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 3 µA @ 1200 V | 1500 V | 2A | 140°C (Max) | 1.6 V @ 3 A | |
|
SR306 A0GDIODE SCHOTTKY 60V 3A DO201AD Taiwan Semiconductor Corporation |
1,900 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A | |
|
|
1N5062TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,616 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
TPUH6D S1GDIODE GEN PURP 200V 6A TO277A Taiwan Semiconductor Corporation |
3,067 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 45 ns | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.05 V @ 6 A | |
|
TSD2G R5G2A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
3,400 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | - | |
|
MBRB1560TRDIODE SCHOTTKY 60V D2PAK SMC Diode Solutions |
6,783 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 700pF @ 5V, 1MHz | - | 5 mA @ 60 V | 60 V | - | -55°C ~ 150°C | 770 mV @ 15 A | |
|
|
BYW34-TAPDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,952 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SR510 A0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
3,369 | - |
RFQ |
Scheda tecnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
CMMR1-10 TR PBFREEDIODE GEN PURP 1000V 1A SOD123F Central Semiconductor Corp |
8,592 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
TPMR6G S1GDIODE GEN PURP 400V 6A TO277A Taiwan Semiconductor Corporation |
5,486 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 6A | -55°C ~ 175°C | 1.2 V @ 6 A | |
|
PD3S120LQ-7DIODE SCHOTTKY 20V 1A POWERDI323 Diodes Incorporated |
1,568 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 46pF @ 10V, 1MHz | - | 160 µA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 420 mV @ 1 A |
|
UPR15E3/TR7DIODE GEN PURP 150V 2.5A DO216 Microchip Technology |
3,771 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | -55°C ~ 150°C | 975 mV @ 2 A | |
|
SBYV28-100-E3/54DIODE GEN PURP 100V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
1,482 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
MBRF10150DIODE SCHOTTKY 150V ITO220AC SMC Diode Solutions |
8,097 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 5V, 1MHz | - | 1 mA @ 100 V | 150 V | - | -55°C ~ 175°C | 1.1 V @ 10 A | |
|
PMEG100V060ELPDAZDIODE SCHOTTKY 100V 6A CFP15 Nexperia USA Inc. |
3,623 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 1V, 1MHz | 8 ns | 450 nA @ 100 V | 100 V | 6A | 175°C (Max) | 840 mV @ 6 A |
|
|
TSP10U45S S1GDIODE SCHOTTKY 45V 10A TO277A Taiwan Semiconductor Corporation |
2,876 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 460 mV @ 10 A | |
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|
AS1PG-M3/84ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,127 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
TPMR6J S1GDIODE GEN PURP 600V 6A TO277A Taiwan Semiconductor Corporation |
7,341 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 40 ns | 10 µA @ 600 V | 600 V | 6A | -55°C ~ 175°C | 1.8 V @ 6 A |
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