Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BY880-1400

BY880-1400

DIODE STD D5.4X7.5 1400V 8A

Diotec Semiconductor
1,250 -

RFQ

BY880-1400

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 5 µA @ 1400 V 1400 V 8A -50°C ~ 175°C 1.1 V @ 8 A
BYV79E-200,127

BYV79E-200,127

DIODE GEN PURP 200V 14A TO220AC

WeEn Semiconductors
949 -

RFQ

BYV79E-200,127

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 50 µA @ 200 V 200 V 14A 150°C (Max) 1.05 V @ 14 A
1N5624

1N5624

RECTIFIER DIODE

Rochester Electronics, LLC
16,629 -

RFQ

1N5624

Scheda tecnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -65°C ~ 175°C 1 V @ 3 A
STPS1045D

STPS1045D

DIODE SCHOTTKY 45V 10A TO220AC

STMicroelectronics
267 -

RFQ

STPS1045D

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 10A 175°C (Max) 600 mV @ 10 A
BYC5-600P127

BYC5-600P127

HYPERFAST RECTIFIER DIODE TO 22

Rochester Electronics, LLC
4,000 -

RFQ

BYC5-600P127

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
APT30DQ60BG

APT30DQ60BG

DIODE GEN PURP 600V 30A TO247

Microchip Technology
256 -

RFQ

APT30DQ60BG

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 25 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.4 V @ 30 A
GE1003

GE1003

RECTIFIER DIODE, 1A, 150V

Rochester Electronics, LLC
1,808 -

RFQ

GE1003

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 4V, 1MHz 35 ns 2 µA @ 150 V 150 V 1A -65°C ~ 175°C 950 mV @ 1 A
VS-HFA06TB120S-M3

VS-HFA06TB120S-M3

DIODE GEN PURP 1.2KV 6A D2PAK

Vishay General Semiconductor - Diodes Division
384 -

RFQ

VS-HFA06TB120S-M3

Scheda tecnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 80 ns 5 µA @ 1200 V 1200 V 6A (DC) -55°C ~ 150°C 3.9 V @ 12 A
SK56L_R1_00001

SK56L_R1_00001

SMC, SKY

Panjit International Inc.
2,194 -

RFQ

SK56L_R1_00001

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 500 mV @ 5 A
MBR1660-E3/45

MBR1660-E3/45

DIODE SCHOTTKY 60V 16A TO220AB

Vishay General Semiconductor - Diodes Division
292 -

RFQ

MBR1660-E3/45

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 60 V 60 V 16A -65°C ~ 150°C 750 mV @ 16 A
2CL75

2CL75

HV DIODE D2.5X12 16000V 0.005A

Diotec Semiconductor
5,000 -

RFQ

2CL75

Scheda tecnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 80 ns 2 µA @ 16000 V 16000 V 5mA -40°C ~ 120°C 60 V @ 10 mA
DSEI8-06A

DSEI8-06A

DIODE GEN PURP 600V 8A TO220AC

IXYS
858 -

RFQ

DSEI8-06A

Scheda tecnica

Tube FRED RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 20 µA @ 600 V 600 V 8A -40°C ~ 150°C 1.5 V @ 8 A
PPS1060

PPS1060

SCHOTTKY TO-277B 60V 10A

Diotec Semiconductor
5,000 -

RFQ

PPS1060

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 60 V 60 V 10A -50°C ~ 150°C 630 mV @ 10 A
BYT79-600,127

BYT79-600,127

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors
312 -

RFQ

BYT79-600,127

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 15A 150°C (Max) 1.38 V @ 15 A
UF600D

UF600D

DIODE UFR D8X7.5 200V 6A

Diotec Semiconductor
102,500 -

RFQ

UF600D

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 200 V 200 V 6A -50°C ~ 175°C 1 V @ 5 A
MBR760

MBR760

DIODE SCHOTTKY 60V 7.5A TO220AC

onsemi
499 -

RFQ

MBR760

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 7.5A -65°C ~ 150°C 750 mV @ 7.5 A
UF600A

UF600A

DIODE UFR D8X7.5 50V 6A

Diotec Semiconductor
2,000 -

RFQ

UF600A

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 50 V 50 V 6A -50°C ~ 175°C 1 V @ 5 A
VS-19TQ015-M3

VS-19TQ015-M3

DIODE SCHOTTKY 15V 19A TO220AC

Vishay General Semiconductor - Diodes Division
3,835 -

RFQ

VS-19TQ015-M3

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 2000pF @ 5V, 1MHz - 10.5 mA @ 15 V 15 V 19A -55°C ~ 125°C 460 mV @ 38 A
UF600J

UF600J

DIODE UFR D8X7.5 600V 6A

Diotec Semiconductor
7,500 -

RFQ

UF600J

Scheda tecnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 10 µA @ 600 V 600 V 6A -50°C ~ 175°C 1.7 V @ 5 A
STPS10L25D

STPS10L25D

DIODE SCHOTTKY 25V 10A TO220AC

STMicroelectronics
643 -

RFQ

STPS10L25D

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 800 µA @ 25 V 25 V 10A 150°C (Max) 460 mV @ 10 A
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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