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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4448/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,765 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 25 nA @ 20 V | 75 V | 200mA | -65°C ~ 150°C | 1 V @ 100 mA | ||
|
VS-18TQ035STRL-M3DIODE SCHOTTKY 35V 18A D2PAK Vishay General Semiconductor - Diodes Division |
3,635 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | |
|
V8P8-M3/87ADIODE SCHOTTKY 80V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,878 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 700 µA @ 80 V | 80 V | 4A | -40°C ~ 150°C | 660 mV @ 8 A |
|
EGP31G-E3/CDIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,486 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 4 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A |
|
|
S10CJ-M3/IDIODE GEN PURP 400V 10A DO214AB Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 5 µs | 10 µA @ 400 V | 600 V | 10A | -55°C ~ 150°C | 1 V @ 10 A | |
|
UPS340/TR13DIODE SCHOTTKY 40V 3A POWERMITE Microchip Technology |
3,515 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
1N4447/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,192 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 25 nA @ 20 V | 75 V | 200mA | -65°C ~ 150°C | 1 V @ 20 mA | ||
|
|
VS-18TQ035STRR-M3DIODE SCHOTTKY 35V 18A D2PAK Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | |
|
|
V8PL6-M3/86ADIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
3,498 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.4 mA @ 60 V | 60 V | 4.3A | -40°C ~ 150°C | 580 mV @ 8 A |
|
|
EGP51F-E3/CDIODE GEN PURP 300V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 5A | -65°C ~ 175°C | 1.25 V @ 5 A |
|
|
S8CG-M3/IDIODE GEN PURP 400V 8A DO214AB Vishay General Semiconductor - Diodes Division |
3,739 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
UPS540/TR13DIODE SCHOTTKY 40V 5A POWERMITE Microchip Technology |
2,956 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 125°C | 540 mV @ 5 A | |
|
|
VS-25ETS10S-M3DIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,562 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
VS-18TQ035SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
|
|
V8PL6-M3/87ADIODE SCHOTTKY 60V 4.3A TO277A Vishay General Semiconductor - Diodes Division |
2,026 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2.4 mA @ 60 V | 60 V | 4.3A | -40°C ~ 150°C | 580 mV @ 8 A |
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|
SFS1608GHMNGDIODE GEN PURP 600V 16A TO263AB Taiwan Semiconductor Corporation |
3,302 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
V10PM10-M3/HDIODE SCHOTTKY 100V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,431 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 120 µA @ 100 V | 100 V | 10A | -40°C ~ 150°C | 750 mV @ 10 A |
|
|
RFN20T2DNZC9SUPER FAST RECOVERY DIODE : RFN2 Rohm Semiconductor |
2,248 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 200 V | 200 V | 20A | 150°C | 980 mV @ 10 A | ||
|
|
RF505TF6SC9FAST RECOVERY DIODE : ROHM'S FAS Rohm Semiconductor |
3,950 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 600 V | 600 V | 5A | 150°C | 1.7 V @ 5 A | ||
|
|
VS-18TQ040SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,005 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 40 V | 40 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A |
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