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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYWB29-150-E3/81DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
IDB30E60ATMA1DIODE GEN PURP 600V 52.3A TO263 Infineon Technologies |
3,870 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 126 ns | 50 µA @ 600 V | 600 V | 52.3A (DC) | -40°C ~ 175°C | 2 V @ 30 A | |
|
APT75DQ100BGDIODE GEN PURP 1KV 75A TO247 Microchip Technology |
3,329 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 100 µA @ 1000 V | 1000 V | 75A | -55°C ~ 175°C | 3 V @ 75 A | |
|
12TQ080DIODE SCHOTTKY 80V 15A TO220AC SMC Diode Solutions |
3,038 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 15A | -55°C ~ 175°C | 840 mV @ 15 A | |
|
VS-6EWH06FNTRL-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
3,200 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 2.1 V @ 6 A |
|
|
VS-10ETF02STRL-M3DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,886 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
|
BYWB29-50-E3/81DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,833 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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LSM315JE3/TR13DIODE SCHOTTKY 15V 3A DO214AB Microchip Technology |
3,504 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 15 V | 15 V | 3A | -55°C ~ 125°C | 320 mV @ 3 A | |
|
VS-16F20DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 200 V | 200 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
MBRD350T4GDIODE SCHOTTKY 50V 3A DPAK onsemi |
2,604 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 600 mV @ 3 A |
|
|
VS-6EWH06FNTRR-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
3,949 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 2.1 V @ 6 A |
|
SFF1008G C0GDIODE GEN PURP 600V 10A ITO220AB Taiwan Semiconductor Corporation |
2,582 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
|
VS-15TQ060STRR-M3DIODE SCHOTTKY 60V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,935 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 620 mV @ 15 A | |
|
1N4153UR-1DIODE GEN PURP 50V 150MA DO213AA Microchip Technology |
3,829 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | - | |
|
VS-16FR20DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,339 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 200 V | 200 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
VIT760-E3/4WDIODE SCHOTTKY 7.5A 60V TO-262AA Vishay General Semiconductor - Diodes Division |
3,207 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
|
|
VS-6EWL06FNTRL-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
2,018 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 70 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.25 V @ 6 A |
|
RFN5TF6SC9SUPER FAST RECOVERY DIODE : RFN5 Rohm Semiconductor |
2,471 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 5A | 150°C | 1.55 V @ 5 A | ||
|
|
VS-12TQ040STRL-M3DIODE SCHOTTKY 40V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 1.75 mA @ 40 V | 40 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A | |
|
TST30H100CW C0GDIODE SCHOTTKY 100V 15A TO220AB Taiwan Semiconductor Corporation |
2,081 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 100 V | 100 V | 15A | -55°C ~ 150°C | 780 mV @ 15 A |
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