Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DSI45-16A

DSI45-16A

DIODE GEN PURP 1.6KV 45A TO247AD

IXYS
2,072 -

RFQ

DSI45-16A

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 20 µA @ 1600 V 1600 V 45A -40°C ~ 175°C 1.28 V @ 45 A
DSEI30-10AR

DSEI30-10AR

DIODE GP 1KV 30A ISOPLUS247

IXYS
3,995 -

RFQ

DSEI30-10AR

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 750 µA @ 1000 V 1000 V 30A -40°C ~ 150°C 2.4 V @ 36 A
DLA60I1200HA

DLA60I1200HA

DIODE GEN PURP 1200V 60A TO247AD

IXYS
2,718 -

RFQ

DLA60I1200HA

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 33pF @ 400V, 1MHz - 30 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 1.19 V @ 60 A
DSEP30-06BR

DSEP30-06BR

DIODE GP 600V 30A ISOPLUS247

IXYS
2,872 -

RFQ

DSEP30-06BR

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 250 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.51 V @ 30 A
DSI45-16AR

DSI45-16AR

DIODE GP 1.6KV 48A ISOPLUS247

IXYS
3,605 -

RFQ

DSI45-16AR

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 3 mA @ 1600 V 1600 V 48A -40°C ~ 175°C 1.18 V @ 40 A
DSEI60-12A

DSEI60-12A

DIODE GEN PURP 1.2KV 52A TO247AD

IXYS
3,290 -

RFQ

DSEI60-12A

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 2.2 mA @ 1200 V 1200 V 52A -40°C ~ 150°C 2.55 V @ 60 A
DSEP30-12AR

DSEP30-12AR

DIODE GP 1.2KV 30A ISOPLUS247

IXYS
2,215 -

RFQ

DSEP30-12AR

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 250 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 2.74 V @ 30 A
DLA40IM800PC-TRL

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263

IXYS
3,916 -

RFQ

DLA40IM800PC-TRL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 10 µA @ 800 V 800 V 40A -55°C ~ 175°C 1.3 V @ 40 A
DSEI12-06A

DSEI12-06A

DIODE GEN PURP 600V 14A TO220AC

IXYS
2,671 -

RFQ

DSEI12-06A

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 50 µA @ 600 V 600 V 14A -40°C ~ 150°C 1.7 V @ 16 A
DSEP8-12A

DSEP8-12A

DIODE GEN PURP 1.2KV 10A TO220AC

IXYS
2,652 -

RFQ

DSEP8-12A

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 60 µA @ 1200 V 1200 V 10A -55°C ~ 175°C 2.94 V @ 10 A
DSEP15-12CR

DSEP15-12CR

DIODE GP 1.2KV 15A ISOPLUS247

IXYS
3,430 -

RFQ

DSEP15-12CR

Scheda tecnica

Tube HiPerDynFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 100 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 4.04 V @ 15 A
DNA30E2200FE

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4PAC

IXYS
3,951 -

RFQ

DNA30E2200FE

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.25 V @ 30 A
DSEP60-12A

DSEP60-12A

DIODE GEN PURP 1.2KV 60A TO247AD

IXYS
2,155 -

RFQ

DSEP60-12A

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 650 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 2.66 V @ 60 A
DSEP60-06A

DSEP60-06A

DIODE GEN PURP 600V 60A TO247AD

IXYS
2,392 -

RFQ

DSEP60-06A

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 650 µA @ 600 V 600 V 60A -55°C ~ 175°C 2.04 V @ 60 A
DHG10I1200PM

DHG10I1200PM

DIODE GEN PURP 1.2KV 10A TO220FP

IXYS
3,047 -

RFQ

DHG10I1200PM

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 15 µA @ 1200 V 1200 V 10A -55°C ~ 150°C 2.69 V @ 10 A
DSEP30-12CR

DSEP30-12CR

DIODE GP 1.2KV 30A ISOPLUS247

IXYS
3,088 -

RFQ

DSEP30-12CR

Scheda tecnica

Tube HiPerDynFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 15 ns 250 µA @ 1200 V 1200 V 30A -55°C ~ 175°C 4.98 V @ 30 A
DSP45-16AZ-TUB

DSP45-16AZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS
3,961 -

RFQ

DSP45-16AZ-TUB

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 19pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 45A -40°C ~ 175°C 1.26 V @ 45 A
DSEP60-12AR

DSEP60-12AR

DIODE GP 1.2KV 60A ISOPLUS247

IXYS
2,127 -

RFQ

DSEP60-12AR

Scheda tecnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 650 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 2.66 V @ 60 A
DSI30-08AS-TUB

DSI30-08AS-TUB

DIODE GEN PURP 800V 30A TO263

IXYS
2,036 -

RFQ

DSI30-08AS-TUB

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 40 µA @ 800 V 800 V 30A -40°C ~ 175°C 1.29 V @ 30 A
DSI30-12A

DSI30-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS
3,590 -

RFQ

DSI30-12A

Scheda tecnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 400V, 1MHz - 40 µA @ 1200 V 1200 V 30A -40°C ~ 175°C 1.29 V @ 30 A
Total 473 Record«Prev1... 18192021222324Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente