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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FESB16GTHE3_A/PDIODE GEN PURP 400V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,914 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A | -65°C ~ 150°C | 1.3 V @ 16 A |
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VB30120S-E3/4WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Scheda tecnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
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FESB16BTHE3_A/PDIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,769 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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JANTX1N3595-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,141 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 3 µs | 1 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA | |
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AS1PKHM3/85ADIODE AVALANCHE 800V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
2,398 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
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VS-8TQ080STRRHM3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,565 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
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FESB16CTHE3_A/PDIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
MUR440-E3/54DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,466 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
DMA50I1200HAPOWER DIODE DISCRETES-RECTIFIER IXYS |
3,433 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 19pF @ 400V, 1MHz | - | 40 µA @ 1200 V | 1200 V | 50A | -55°C ~ 175°C | 1.3 V @ 50 A | |
|
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AS1PMHM3/84ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
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|
LSM1100G/TR13DIODE SCHOTTKY 1A 100V SMBG Microchip Technology |
2,529 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
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FESB16DTHE3_A/PDIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,351 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
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VS-6EWX06FNTR-M3DIODE GEN PURP 600V 6A DPAK Vishay General Semiconductor - Diodes Division |
3,165 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 19 ns | 20 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 3.1 V @ 6 A |
|
VS-30APF06-M3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,771 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
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AS1PMHM3/85ADIODE AVALANCHE 1KV 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,361 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
LSM180G/TR13DIODE SCHOTTKY 1A 80V SMBG Microchip Technology |
3,494 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
QH08BZ600DIODE GEN PURP 600V 8A TO263AB Power Integrations |
3,386 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 11.1 ns | 250 µA @ 600 V | 600 V | 8A | 150°C (Max) | 3.15 V @ 8 A |
|
SDT15H100P5-7SCHOTTKY RECTIFIER PDI5 T&R 1.5K Diodes Incorporated |
2,450 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 15A | -55°C ~ 150°C | 660 mV @ 15 A | |
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VS-30APF12-M3DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 30A | -40°C ~ 150°C | 1.41 V @ 30 A | |
|
V8P12-M3/87ADIODE SCHOTTKY 8A 120V TO-277A Vishay General Semiconductor - Diodes Division |
3,099 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 840 mV @ 8 A |
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