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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GATELEAD1110008XPSA1HIGH POWER THYR / DIO Infineon Technologies |
2,697 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADMPWHPK1258XXPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,126 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADRD406XPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,125 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWH406XPSA1STD THYR/DIODEN DISC Infineon Technologies |
3,242 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHBK750XXPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,477 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHBN661XXPSA1STD THYR/DIODEN DISC Infineon Technologies |
3,892 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHBU445XXPSA1STD THYR/DIODEN DISC Infineon Technologies |
3,649 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHRD394XXPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,297 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHRD762XPSA1STD THYR/DIODEN DISC Infineon Technologies |
2,814 | - |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
D950N18TXPSA1DIODE GEN PURP 1.8KV 950A Infineon Technologies |
3,188 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1800 V | 1800 V | 950A | -40°C ~ 180°C | 1.12 V @ 650 A | |
|
|
IDP23013XUMA1IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies |
2,462 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
IDK08G65C5XTMA2DIODE SCHOTTKY 650V 8A TO263-2 Infineon Technologies |
3,953 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | - | 650 V | 8A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A |
|
D1230N14TXPSA1DIODE GEN PURP 1.4KV 1230A Infineon Technologies |
3,513 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 1400 V | 1400 V | 1230A | -40°C ~ 180°C | 1.063 V @ 800 A | |
|
|
IDC75S120C5X7SA1SIC CHIP Infineon Technologies |
3,474 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
ND89N12KHPSA1DIODE GP 1.2KV 89A BG-PB20-1 Infineon Technologies |
3,209 | - |
RFQ |
Scheda tecnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1200 V | 1200 V | 89A | -40°C ~ 135°C | - | |
|
46DN06B02ELEMPRXPSA1DIODE GEN PURP 600V Infineon Technologies |
3,596 | - |
RFQ |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 600 V | 600 V | 7740A | 180°C (Max) | 980 mV @ 6000 A | ||
|
|
ND171N16KHPSA1DIODE GP 1.6KV 171A BG-PB34-1 Infineon Technologies |
2,139 | - |
RFQ |
Scheda tecnica |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1600 V | 1600 V | 171A | -40°C ~ 135°C | - | |
|
|
ND171N16KHPSA2DIODE Infineon Technologies |
3,312 | - |
RFQ |
Scheda tecnica |
Tray | ND171N | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1600 V | 1600 V | 171A | 150°C | 1.26 V @ 500 A |
|
D2450N07TXPSA1DIODE GEN PURP 700V 2450A Infineon Technologies |
3,842 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 700 V | 700 V | 2450A | -40°C ~ 180°C | 880 mV @ 2000 A | |
|
IDL12G65C5XUMA2DIODE SCHOTTKY 650V 12A VSON-4 Infineon Technologies |
7,690 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | 190 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 150°C | 1.7 V @ 12 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
