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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RL 2V1DIODE GEN PURP 400V 2A AXIAL Sanken |
3,919 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 2A | -40°C ~ 150°C | 1.3 V @ 2 A | |
|
VS-8EWS16STRR-M3DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,933 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A |
|
VS-HFA16PB120HN3DIODE GEN PURP 1.2KV 16A TO247AC Vishay General Semiconductor - Diodes Division |
2,910 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 90 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A |
|
VS-ETH3006STRLHM3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
3,751 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A |
|
VS-12F40DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
V10P12HM3_A/IDIODE GEN PURP 120V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,868 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A |
|
VFT5200-E3/4WDIODE SCHOTTKY 5A 200V ITO-220AB Vishay General Semiconductor - Diodes Division |
2,267 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A | |
|
|
VS-8EWS16S-M3DIODE GEN PURP 1.6KV 8A TO252 Vishay General Semiconductor - Diodes Division |
2,731 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | -40°C ~ 150°C | 1.1 V @ 8 A | |
|
APT30D60SG/TRFRED D 600 V 30 A TO-268 TAPE & Microchip Technology |
2,853 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | Standard | Active | Surface Mount | - | - | - | 600 V | 30A | - | - | |
|
|
VS-ETH3006STRRHM3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,075 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.65 V @ 30 A |
|
VS-12FR40DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,814 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 400 V | 400 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
SS34L RUGDIODE SCHOTTKY 40V 3A SUB SMA Taiwan Semiconductor Corporation |
2,844 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SS10P3-M3/86ADIODE SCHOTTKY 30V 10A TO277A Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 30 V | 30 V | 10A | -55°C ~ 150°C | 560 mV @ 10 A |
|
VS-STPS30L60CW-N3DIODE SCHOTTKY 60V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,361 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 480 µA @ 60 V | 60 V | 30A | -55°C ~ 150°C | 800 mV @ 30 A | |
|
1N647UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,467 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 400 V | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | ||
|
JANTXV1N4150-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,255 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/231 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
|
1N5712-1SCHOTTKY DIODE Microchip Technology |
3,872 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
SS36L RUGDIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation |
2,594 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
V10P6HM3_A/IDIODE SCHOTTKY 60V 10A TO277A Vishay General Semiconductor - Diodes Division |
3,354 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.9 mA @ 60 V | 60 V | 10A | -40°C ~ 150°C | 590 mV @ 10 A |
|
APT15DQ100BGDIODE GEN PURP 1KV 15A TO247 Microchip Technology |
2,989 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 235 ns | 100 µA @ 1000 V | 1000 V | 15A | -55°C ~ 175°C | 3 V @ 15 A |
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