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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D04650XQSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 125pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A | 175°C | 1.7 V @ 4 A | |
|
|
WNSC2D10650TJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
BYC8-600P,127DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors |
2,878 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 20 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.9 V @ 8 A | |
|
|
BYW29E-200,127DIODE GEN PURP 200V 8A TO220AC WeEn Semiconductors |
9,990 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | 150°C (Max) | 1.05 V @ 8 A | |
|
BYC10DX-600,127DIODE GEN PURP 500V 10A TO220FP WeEn Semiconductors |
2,276 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 200 µA @ 600 V | 500 V | 10A | 150°C (Max) | 2.5 V @ 10 A | |
|
|
BYC8X-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
3,950 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 52 ns | 150 µA @ 600 V | 600 V | 8A | 150°C (Max) | 2.9 V @ 8 A | |
|
|
BYC10-600,127DIODE GEN PURP 500V 10A TO220AC WeEn Semiconductors |
4,365 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 10A | 150°C (Max) | 2.9 V @ 10 A | |
|
|
BYV79E-200,127DIODE GEN PURP 200V 14A TO220AC WeEn Semiconductors |
949 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 50 µA @ 200 V | 200 V | 14A | 150°C (Max) | 1.05 V @ 14 A | |
|
|
BYT79-600,127DIODE GEN PURP 600V 15A TO220AC WeEn Semiconductors |
312 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 15A | 150°C (Max) | 1.38 V @ 15 A |
- 1500+ Media giornaliera RFQ
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