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Diodi-Raddrizzatori-Singoli
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDLL0.2A30DIODE SCHOTTKY 30V 200MA DO213AA Microchip Technology |
2,564 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 30 V | 30 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
LXA04B600DIODE GEN PURP 600V 4A TO263AB Power Integrations |
2,657 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18.5 ns | 250 µA @ 600 V | 600 V | 4A | 150°C (Max) | 2.96 V @ 4 A |
|
SICRB10650CTTRDIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions |
3,590 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 60 µA @ 650 V | 650 V | 5A | -55°C ~ 175°C | 1.7 V @ 5 A | |
|
VBT5200-E3/4WDIODE SCHOTTKY 5A 200V TO-263AB Vishay General Semiconductor - Diodes Division |
3,978 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 150°C | 1.6 V @ 5 A | |
|
HSM540G/TR13DIODE SCHOTTKY 5A 40V SMCG Microchip Technology |
3,123 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N649UR-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,679 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 600 V | 600 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | ||
|
|
CDLL0.2A40DIODE SCHOTTKY 40V 200MA DO213AA Microchip Technology |
3,025 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
LXA04T600DIODE GEN PURP 600V 4A TO220AC Power Integrations |
2,090 | - |
RFQ |
Scheda tecnica |
Tube | Qspeed™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18.5 ns | 250 µA @ 600 V | 600 V | 4A | 150°C (Max) | 2.96 V @ 4 A |
|
VS-HFA08PB120-N3DIODE GEN PURP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division |
3,374 | - |
RFQ |
Scheda tecnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
|
UF5GD1-13ULTRAFAST RECOVERY RECTIFIER TO2 Diodes Incorporated |
2,601 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 61pF @ 10V, 1MHz | 45 ns | 10 µA @ 400 V | 400 V | 5A | -65°C ~ 150°C | 1.4 V @ 5 A | |
|
|
HSM550G/TR13DIODE SCHOTTKY 50V 5A DO215AB Microchip Technology |
2,883 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 50 V | 50 V | 5A | -55°C ~ 175°C | 650 mV @ 5 A | |
|
|
DMA50I1600HAPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,611 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 19pF @ 400V, 1MHz | - | 40 µA @ 1600 V | 1600 V | 50A | -55°C ~ 175°C | 1.3 V @ 50 A | |
|
|
CDLL0.5A30DIODE SCHOTTKY 30V 500MA DO213AA Microchip Technology |
2,409 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 30 V | 30 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
MBR8170TFSTBG170V 8A SCHOTTKY onsemi |
2,208 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 237pF @ 1V, 1MHz | - | 30 µA @ 170 V | 170 V | 8A (DC) | -55°C ~ 175°C | 890 mV @ 8 A | |
|
AIDW16S65C5XKSA1DIODE SCHOTTKY 650V 16A TO247 Infineon Technologies |
3,816 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 471pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 16A (DC) | -40°C ~ 175°C | 1.7 V @ 16 A |
|
|
HSM560G/TR13DIODE SCHOTTKY 60V 5A DO215AB Microchip Technology |
2,455 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 60 V | 60 V | 5A | -55°C ~ 175°C | 650 mV @ 5 A | |
|
FFSM1265A650V 12A SIC SBD onsemi |
2,826 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 665pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 12.5A (DC) | -55°C ~ 175°C | 1.75 V @ 12 A | |
|
|
1N4531URDIODE GEN PURP 75V 125MA DO213AA Microchip Technology |
2,766 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 20 ns | 500 nA @ 75 V | 75 V | 125mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
MBR8170TFSTAG170V 8A SCHOTTKY onsemi |
3,350 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 237pF @ 1V, 1MHz | - | 30 µA @ 170 V | 170 V | 8A (DC) | -55°C ~ 175°C | 890 mV @ 8 A | |
|
LL4150DIODE SOD-80 50V 0.3A 4NS DComponents |
50,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 100 nA @ 240 V | 50 V | 300mA | -50°C ~ 175°C | 1.2 V @ 200 mA |
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