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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GPAS1003 MNGDIODE GEN PURP 200V 10A TO263AB Taiwan Semiconductor Corporation |
3,179 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
SS19LHRFGDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
3,287 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A |
|
|
RS1ML MHGDIODE GEN PURP 800MA SUB SMA Taiwan Semiconductor Corporation |
3,658 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RS1DLHMTGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
GPAS1004 MNGDIODE GEN PURP 400V 10A TO263AB Taiwan Semiconductor Corporation |
3,160 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
SS210HR5GDIODE SCHOTTKY 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,052 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
|
RS1ML R3GDIODE GEN PURP 1KV 800MA SUB SMA Taiwan Semiconductor Corporation |
3,980 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
RS2A M4GDIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation |
2,890 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
RS1DLHRQGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,296 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
GPAS1006 MNGDIODE GEN PURP 800V 10A TO263AB Taiwan Semiconductor Corporation |
3,168 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
SS210L R3GDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,526 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
RS2AA M2GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,411 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS1DLHRTGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,477 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
GPAS1007 MNGDIODE GEN PURP 10A TO263AB Taiwan Semiconductor Corporation |
3,325 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 10A | -55°C ~ 150°C | 1.1 V @ 10 A | |
|
|
SS210L RFGDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
2,884 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
RS2AAHM2GDIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,903 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RS1GL MQGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,864 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
MBRS10100 MNGDIODE SCHOTTKY 100V 10A TO263AB Taiwan Semiconductor Corporation |
2,467 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | - | |
|
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SS19LDIODE SCHOTTKY 90V 1A SUB SMA Taiwan Semiconductor Corporation |
3,207 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 50 µA @ 90 V | 90 V | 1A | -55°C ~ 150°C | 800 mV @ 1 A | |
|
|
SS210LHR3GDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,087 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
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