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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N4001GHA0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,732	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA802G C0G DIODE GEN PURP 100V 8A TO220AC Taiwan Semiconductor Corporation	3,147	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	1 V @ 8 A
BAT43X RKG DIODE SCHOTTKY 30V 200MA SOD523F Taiwan Semiconductor Corporation	3,464	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	10pF @ 1V, 1MHz	5 ns	500 nA @ 25 V	30 V	200mA (DC)	-55°C ~ 150°C	1 V @ 200 mA
SK59BHR5G DIODE SCHOTTKY 90V 5A DO214AA Taiwan Semiconductor Corporation	3,878	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 90 V	90 V	5A	-55°C ~ 150°C	850 mV @ 5 A
1N4002GHA0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	2,997	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA803G C0G DIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation	2,763	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	1 V @ 8 A
SKL13B R5G DIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation	2,525	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	200 µA @ 30 V	30 V	1A	-55°C ~ 125°C	390 mV @ 1 A
1N4003G A0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2,337	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA804G C0G DIODE GEN PURP 300V 8A TO220AC Taiwan Semiconductor Corporation	3,357	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1 V @ 8 A
SKL13BHR5G DIODE SCHOTTKY 30V 1A DO214AA Taiwan Semiconductor Corporation	2,175	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	200 µA @ 30 V	30 V	1A	-55°C ~ 125°C	390 mV @ 1 A
1N4003GHA0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2,801	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA805G C0G DIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation	2,582	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SS110HR3G DIODE SCHOTTKY 100V 1A DO214AC Taiwan Semiconductor Corporation	3,895	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	100 µA @ 100 V	100 V	1A	-55°C ~ 125°C	500 mV @ 1 A
1N4004G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,726	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA806G C0G DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	2,937	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	55pF @ 4V, 1MHz	80 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
MBR735HC0G DIODE SCHOTTKY 35V 7.5A TO220AC Taiwan Semiconductor Corporation	2,019	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 35 V	35 V	7.5A	-55°C ~ 150°C	840 mV @ 15 A
SS110L RFG DIODE SCHOTTKY 100V 1A SUB SMA Taiwan Semiconductor Corporation	3,285	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	50 µA @ 100 V	100 V	1A	-55°C ~ 150°C	800 mV @ 1 A
1N4004GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	2,368	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
HERA807G C0G DIODE GEN PURP 800V 8A TO220AC Taiwan Semiconductor Corporation	2,176	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	55pF @ 4V, 1MHz	80 ns	10 µA @ 800 V	800 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
MBR745 C0G DIODE SCHOTTKY 45V 7.5A TO220AC Taiwan Semiconductor Corporation	2,397	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 45 V	45 V	7.5A	-55°C ~ 150°C	840 mV @ 15 A