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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
US1B M2G DIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation	3,287	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
SRT110HA0G DIODE SCHOTTKY 100V 1A TS-1 Taiwan Semiconductor Corporation	3,748	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	1A	-55°C ~ 150°C	800 mV @ 1 A
S3ABHM4G DIODE GEN PURP 50V 3A DO214AA Taiwan Semiconductor Corporation	2,880	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	40pF @ 4V, 1MHz	1.5 µs	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
SF45GHB0G DIODE GEN PURP 300V 4A DO201AD Taiwan Semiconductor Corporation	3,154	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	4A	-55°C ~ 150°C	1.3 V @ 4 A
SR110 B0G DIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation	3,130	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	1A	-55°C ~ 150°C	850 mV @ 1 A
SFAF1603G C0G DIODE GEN PURP 150V 16A ITO220AC Taiwan Semiconductor Corporation	2,188	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	975 mV @ 16 A
US1BHM2G DIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation	3,552	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
SRT115 A0G DIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation	3,196	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 150°C	900 mV @ 1 A
S3BB M4G DIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation	3,325	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	40pF @ 4V, 1MHz	1.5 µs	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
SF46G B0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,035	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	4A	-55°C ~ 150°C	1.3 V @ 4 A
SR110HB0G DIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation	3,201	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	1A	-55°C ~ 150°C	850 mV @ 1 A
SFAF1603GHC0G DIODE GEN PURP 150V 16A ITO220AC Taiwan Semiconductor Corporation	2,900	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-55°C ~ 150°C	975 mV @ 16 A
ES3A M6G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	2,898	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SRT115HA0G DIODE SCHOTTKY 150V 1A TS-1 Taiwan Semiconductor Corporation	3,790	-	RFQ	Scheda tecnica	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 150°C	900 mV @ 1 A
S3BBHM4G DIODE GEN PURP 100V 3A DO214AA Taiwan Semiconductor Corporation	2,255	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	40pF @ 4V, 1MHz	1.5 µs	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
SF46GHB0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,907	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	4A	-55°C ~ 150°C	1.3 V @ 4 A
SR115 B0G DIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation	2,768	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
SFAF1604G C0G DIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation	2,119	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	975 mV @ 16 A
ES3AHM6G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	2,289	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	45pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SRT12 A0G DIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation	3,091	-	RFQ	Scheda tecnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 20 V	20 V	1A	-55°C ~ 125°C	550 mV @ 1 A