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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ESDLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
3,957 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 21pF @ 4V, 1MHz | 35 ns | 1 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 950 mV @ 800 mA |
|
HS1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
2,968 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
LS4148 L0GDIODE GP 75V 450MA MINIMELF Taiwan Semiconductor Corporation |
2,736 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | - | 5 µA @ 75 V | 75 V | 450mA | -65°C ~ 175°C | 1 V @ 450 mA | |
|
|
ESGLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,054 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
|
|
HS1F M2GDIODE GEN PURP 300V 1A DO214AC Taiwan Semiconductor Corporation |
2,033 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
ESJLWHRQGDIODE, SUPER FAST Taiwan Semiconductor Corporation |
2,269 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.7 V @ 800 mA |
|
RS2B M4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
3,343 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
HS1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
3,904 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
HS1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
3,832 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
US1D M2GDIODE GEN PURP 200V 1A DO214AC Taiwan Semiconductor Corporation |
3,761 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
TSS40L RWGDIODE SCHOTTKY 40V 200MA 1005 Taiwan Semiconductor Corporation |
3,603 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 200 nA @ 30 V | 40 V | 200mA | -65°C ~ 125°C | 1 V @ 40 mA | |
|
|
US1G M2GDIODE GEN PURP 400V 1A DO214AC Taiwan Semiconductor Corporation |
2,934 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
TSS42L RWGDIODE SCHOTTKY 30V 200A 1005 Taiwan Semiconductor Corporation |
2,430 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | -55°C ~ 125°C | 650 mV @ 50 mA | |
|
|
US1J M2GDIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation |
2,413 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
TSS43L RWGDIODE SCHOTTKY 30V 200A 1005 Taiwan Semiconductor Corporation |
3,937 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | -55°C ~ 125°C | 450 mV @ 15 mA | |
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|
TSS43U RGGDIODE SCHOTTKY 30V 200MA 0603 Taiwan Semiconductor Corporation |
2,795 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA | -55°C ~ 125°C | 450 mV @ 15 mA | |
|
|
TSS54L RWGDIODE SCHOTTKY 30V 200MA 1005 Taiwan Semiconductor Corporation |
2,108 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | -65°C ~ 125°C | 1 V @ 100 mA | |
|
|
TSS70L RWGDIODE SCHOTTKY 70V 70MA 1005 Taiwan Semiconductor Corporation |
3,065 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 5 ns | 100 nA @ 50 V | 70 V | 70mA | -65°C ~ 125°C | 1 V @ 15 mA | |
|
|
S1KLW RVGDIODE GEN PURP 800V 1A SOD123W Taiwan Semiconductor Corporation |
2,217 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
HER105G R0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,437 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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