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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
ES1LJ R3G DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation	2,517	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	18pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR460 B0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2,667	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SS26LHRTG DIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation	3,782	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 60 V	60 V	2A	-55°C ~ 150°C	700 mV @ 2 A
SR810HB0G DIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation	2,910	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	8A	-55°C ~ 150°C	920 mV @ 8 A
SFF1601GHC0G DIODE GEN PURP 50V 16A ITO220AB Taiwan Semiconductor Corporation	3,204	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	975 mV @ 8 A
ES1LJHR3G DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation	2,838	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	18pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
MUR460HB0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2,320	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 600 V	600 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SS29L MQG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	3,087	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SR815 B0G DIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation	2,476	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	8A	-55°C ~ 150°C	1.02 V @ 8 A
ES2A R5G DIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation	3,119	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	25pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
MUR4L20 B0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	3,465	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A
SS29L MTG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	2,832	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
SR815HB0G DIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation	3,765	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	8A	-55°C ~ 150°C	1.02 V @ 8 A
ES2AHR5G DIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation	2,328	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	25pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	2A	-55°C ~ 150°C	950 mV @ 2 A
MUR4L20HB0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	2,743	-	RFQ	Scheda tecnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	65pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 175°C	890 mV @ 4 A
SS29L RQG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	2,681	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A
UF1A B0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,173	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
ES2BAHR3G DIODE GEN PURP 100V 2A DO214AC Taiwan Semiconductor Corporation	3,602	-	RFQ	Scheda tecnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	25pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	2A	-55°C ~ 150°C	950 mV @ 2 A
MUR4L40 B0G DIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation	3,872	-	RFQ	Scheda tecnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	65pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	4A	-55°C ~ 175°C	1.28 V @ 4 A
SS29L RTG DIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation	3,753	-	RFQ	Scheda tecnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 90 V	90 V	2A	-55°C ~ 150°C	850 mV @ 2 A