Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S2K M4G

S2K M4G

DIODE GEN PURP 800V 2A DO214AA

Taiwan Semiconductor Corporation
2,906 -

RFQ

S2K M4G

Scheda tecnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SRA1020 C0G

SRA1020 C0G

DIODE SCHOTTKY 20V 10A TO220AC

Taiwan Semiconductor Corporation
3,140 -

RFQ

SRA1020 C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 10A -55°C ~ 125°C 550 mV @ 10 A
UGA15120HC0G

UGA15120HC0G

DIODE GEN PURP 15A TO220AC

Taiwan Semiconductor Corporation
3,948 -

RFQ

UGA15120HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 1200 V - 15A -55°C ~ 175°C 2.9 V @ 15 A
SRA1020HC0G

SRA1020HC0G

DIODE SCHOTTKY 20V 10A TO220AC

Taiwan Semiconductor Corporation
2,107 -

RFQ

SRA1020HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 20 V 20 V 10A -55°C ~ 125°C 550 mV @ 10 A
S1G R3G

S1G R3G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation
2,773 -

RFQ

S1G R3G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
UGA8120 C0G

UGA8120 C0G

DIODE GEN PURP 8A TO220AC

Taiwan Semiconductor Corporation
3,798 -

RFQ

UGA8120 C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 70 ns 5 µA @ 1200 V - 8A -55°C ~ 175°C 2.8 V @ 8 A
SRA1030 C0G

SRA1030 C0G

DIODE SCHOTTKY 30V 10A TO220AC

Taiwan Semiconductor Corporation
3,469 -

RFQ

SRA1030 C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 10A -55°C ~ 125°C 550 mV @ 10 A
UGA8120HC0G

UGA8120HC0G

DIODE GEN PURP 8A TO220AC

Taiwan Semiconductor Corporation
2,353 -

RFQ

UGA8120HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 70 ns 5 µA @ 1200 V - 8A -55°C ~ 175°C 2.8 V @ 8 A
SRA1030HC0G

SRA1030HC0G

DIODE SCHOTTKY 30V 10A TO220AC

Taiwan Semiconductor Corporation
3,173 -

RFQ

SRA1030HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 30 V 30 V 10A -55°C ~ 125°C 550 mV @ 10 A
UGF10J C0G

UGF10J C0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation
2,619 -

RFQ

UGF10J C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 25 ns 5 µA @ 600 V 600 V 10A -55°C ~ 150°C 2 V @ 10 A
SRA1040 C0G

SRA1040 C0G

DIODE SCHOTTKY 40V 10A TO220AC

Taiwan Semiconductor Corporation
3,729 -

RFQ

SRA1040 C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 10 A
UGF12J C0G

UGF12J C0G

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation
2,661 -

RFQ

UGF12J C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 20 ns 5 µA @ 600 V 600 V 12A -55°C ~ 150°C 2 V @ 12 A
SRA1040HC0G

SRA1040HC0G

DIODE SCHOTTKY 40V 10A TO220AC

Taiwan Semiconductor Corporation
3,088 -

RFQ

SRA1040HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 40 V 40 V 10A -55°C ~ 125°C 550 mV @ 10 A
UGF12JD C0G

UGF12JD C0G

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation
3,998 -

RFQ

UGF12JD C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 45 ns 500 nA @ 600 V 600 V 12A -55°C ~ 175°C 3.1 V @ 12 A
SRA1050 C0G

SRA1050 C0G

DIODE SCHOTTKY 50V 10A TO220AC

Taiwan Semiconductor Corporation
3,425 -

RFQ

SRA1050 C0G

Scheda tecnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 10A -55°C ~ 150°C 700 mV @ 10 A
UGF12JDHC0G

UGF12JDHC0G

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation
3,824 -

RFQ

UGF12JDHC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 45 ns 500 nA @ 600 V 600 V 12A -55°C ~ 175°C 3.1 V @ 12 A
SRA1050HC0G

SRA1050HC0G

DIODE SCHOTTKY 50V 10A TO220AC

Taiwan Semiconductor Corporation
2,868 -

RFQ

SRA1050HC0G

Scheda tecnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 50 V 50 V 10A -55°C ~ 150°C 700 mV @ 10 A
SSL12HM2G

SSL12HM2G

DIODE SCHOTTKY 20V 1A DO214AC

Taiwan Semiconductor Corporation
2,823 -

RFQ

SSL12HM2G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 20 V 20 V 1A -55°C ~ 125°C 390 mV @ 1 A
SSL13HM2G

SSL13HM2G

DIODE SCHOTTKY 30V 1A DO214AC

Taiwan Semiconductor Corporation
3,276 -

RFQ

SSL13HM2G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 30 V 30 V 1A -55°C ~ 125°C 390 mV @ 1 A
SSL14HM2G

SSL14HM2G

DIODE SCHOTTKY 40V 1A DO214AC

Taiwan Semiconductor Corporation
3,638 -

RFQ

SSL14HM2G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 40 V 40 V 1A -55°C ~ 125°C 390 mV @ 1 A
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