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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HS5D R6GDIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,370 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1 V @ 5 A | ||
|
1N4002GHDIODE GEN PURP 1A 100V DO-41 Taiwan Semiconductor Corporation |
2,376 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
S4M R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,050 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | ||
|
SFA804GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
3,676 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A (DC) | -55°C ~ 150°C | 975 mV @ 8 A | ||
|
|
ESH3D R7DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,186 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
|
|
MBRF1645DIODE SCHOTTKY 45V 16A ITO220 Taiwan Semiconductor Corporation |
2,831 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 45 V | 45 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | ||
|
|
ES3D M6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,965 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
SR309HDIODE SCHOTTKY 30A 90V DO-201AD Taiwan Semiconductor Corporation |
3,746 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 3A (DC) | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
S10MC R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,494 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | ||
|
6A10GHDIODE GEN PURP 6A 100V R-6 Taiwan Semiconductor Corporation |
3,596 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A (DC) | -55°C ~ 150°C | 1.1 V @ 6 A | |
|
|
SK55C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,785 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 750 mV @ 5 A | ||
|
SK310B M4GDIODE SCHOTTKY 100V 3A DO214AA Taiwan Semiconductor Corporation |
2,253 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A | |
|
|
SK33B M4GDIODE SCHOTTKY 30V 3A DO214AA Taiwan Semiconductor Corporation |
2,939 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SK34B M4GDIODE SCHOTTKY 40V 3A DO214AA Taiwan Semiconductor Corporation |
3,796 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ES3D V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,493 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
|
SK36B M4GDIODE SCHOTTKY 60V 3A DO214AA Taiwan Semiconductor Corporation |
2,938 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
ES3DV V6GDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
2,748 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | - | |
|
|
ESH3B V6GDIODE GEN PURP 100V 3A DO214AB Taiwan Semiconductor Corporation |
3,394 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | - | |
|
|
HS2M R5GDIODE GEN PURP 1KV 2A DO214AA Taiwan Semiconductor Corporation |
2,928 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
MUR820DIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
3,245 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 8A (DC) | -55°C ~ 175°C | 975 mV @ 8 A |
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