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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
TSN525M60HS3G DIODE SCHOTTKY 60V 25A 8PDFN Taiwan Semiconductor Corporation	1,011	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	500 µA @ 60 V	60 V	25A	-55°C ~ 150°C	630 mV @ 25 A
SF2001PT C0G DIODE GEN PURP 50V 20A TO247AD Taiwan Semiconductor Corporation	3,262	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2001PTHC0G DIODE GEN PURP 50V 20A TO247AD Taiwan Semiconductor Corporation	3,956	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2002G C0G DIODE GEN PURP 100V 20A TO220AB Taiwan Semiconductor Corporation	3,804	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2002GHC0G DIODE GEN PURP 100V 20A TO220AB Taiwan Semiconductor Corporation	2,669	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2002PT C0G DIODE GEN PURP 100V 20A TO247AD Taiwan Semiconductor Corporation	2,479	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2002PTHC0G DIODE GEN PURP 100V 20A TO247AD Taiwan Semiconductor Corporation	3,079	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2003G C0G DIODE GEN PURP 150V 20A TO220AB Taiwan Semiconductor Corporation	2,196	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2003GHC0G DIODE GEN PURP 150V 20A TO220AB Taiwan Semiconductor Corporation	2,016	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2003PT C0G DIODE GEN PURP 150V 20A TO247AD Taiwan Semiconductor Corporation	2,543	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2003PTHC0G DIODE GEN PURP 150V 20A TO247AD Taiwan Semiconductor Corporation	2,177	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	20A	-55°C ~ 150°C	1.1 V @ 20 A
SF2004GHC0G DIODE GEN PURP 200V 20A TO220AB Taiwan Semiconductor Corporation	2,478	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	20A	-55°C ~ 150°C	975 mV @ 10 A
SF2005GHC0G DIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation	3,489	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
SF2006GHC0G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	3,981	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
SF2007G C0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2,248	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
SF2007GHC0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2,883	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
SF2007PT C0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2,538	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
SF2007PTHC0G DIODE GEN PURP 500V 20A TO247AD Taiwan Semiconductor Corporation	2,277	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	20A	-55°C ~ 150°C	1.9 V @ 20 A
SF2008G C0G DIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation	2,430	-	RFQ	Scheda tecnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 10 A
SF2008GHC0G DIODE GEN PURP 600V 20A TO220AB Taiwan Semiconductor Corporation	3,678	-	RFQ	Scheda tecnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.7 V @ 10 A