Diodi-Raddrizzatori-Singoli

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UC1612J

UC1612J

RECTIFIER DIODE, SCHOTTKY

Rochester Electronics, LLC
228 -

RFQ

UC1612J

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
RHRG3040

RHRG3040

RECTIFIER DIODE

Rochester Electronics, LLC
4,298 -

RFQ

RHRG3040

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 45 ns 250 µA @ 400 V 400 V 30A -65°C ~ 175°C 2.1 V @ 30 A
RHRG7570

RHRG7570

RECTIFIER DIODE

Rochester Electronics, LLC
1,650 -

RFQ

RHRG7570

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 500 µA @ 700 V 700 V 75A -65°C ~ 175°C 3 V @ 75 A
BYR29-600,127

BYR29-600,127

NOW WEEN - BYR29-600 - ULTRAFAST

Rochester Electronics, LLC
2,459 -

RFQ

BYR29-600,127

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 1.5 V @ 8 A
RHRG75100

RHRG75100

RECTIFIER DIODE

Rochester Electronics, LLC
750 -

RFQ

RHRG75100

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 100 ns 500 µA @ 1000 V 1000 V 75A -65°C ~ 175°C 3 V @ 75 A
IDH15S120A

IDH15S120A

RECTIFIER DIODE, SCHOTTKY

Rochester Electronics, LLC
176 -

RFQ

IDH15S120A

Scheda tecnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 750pF @ 1V, 1MHz 0 ns 360 µA @ 1.2 V 1.2 V 15A (DC) -55°C ~ 175°C 1.8 V @ 15 A
SBT700-06RH-1E

SBT700-06RH-1E

SBT700-06RH - SCHOTTKY BARRIER D

Rochester Electronics, LLC
932 -

RFQ

SBT700-06RH-1E

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
RURG3080

RURG3080

RECTIFIER DIODE

Rochester Electronics, LLC
1,672 -

RFQ

RURG3080

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 150 ns 500 µA @ 800 V 800 V 30A -65°C ~ 175°C 1.8 V @ 30 A
RHRU150100

RHRU150100

150A, 1000V HYPERFAST DIODE

Rochester Electronics, LLC
383 -

RFQ

RHRU150100

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 500 µA @ 1000 V 1000 V 150A -65°C ~ 175°C 3 V @ 150 A
NTSV20120CTG

NTSV20120CTG

RECTIFIER DIODE, SCHOTTKY, 2 ELE

Rochester Electronics, LLC
10,900 -

RFQ

NTSV20120CTG

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
MR10120E

MR10120E

DIODE SWITCHING 1.2KV 10A

Rochester Electronics, LLC
2,166 -

RFQ

MR10120E

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
IDW50E60

IDW50E60

IDW50E60 - SILICON POWER DIODE

Rochester Electronics, LLC
960 -

RFQ

IDW50E60

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
BAT2402ELSE6327XTSA1

BAT2402ELSE6327XTSA1

BAT24 - RF MIXER AND DETECTOR SC

Rochester Electronics, LLC
34,246 -

RFQ

BAT2402ELSE6327XTSA1

Scheda tecnica

Bulk RoHS - - Active - - - - - - - -
RURU5060

RURU5060

RECTIFIER DIODE

Rochester Electronics, LLC
3,504 -

RFQ

RURU5060

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Chassis Mount - 75 ns 500 µA @ 600 V 600 V 50A -65°C ~ 175°C 1.6 V @ 50 A
FFSP0465A

FFSP0465A

SIC DIODE - 650V, 4A, TO-220-2

Rochester Electronics, LLC
2,400 -

RFQ

FFSP0465A

Scheda tecnica

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 258pF @ 1V, 100kHz 0 ns 200 mA @ 650 V 650 V 8.6A (DC) -55°C ~ 175°C 1.75 V @ 4 A
RURG8050

RURG8050

RECTIFIER DIODE

Rochester Electronics, LLC
931 -

RFQ

RURG8050

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 85 ns 500 µA @ 500 V 500 V 80A -65°C ~ 175°C 1.6 V @ 80 A
SB5100

SB5100

RECTIFIER DIODE, SCHOTTKY, 5A, 1

Rochester Electronics, LLC
34,850 -

RFQ

SB5100

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 100 V 100 V 5A -50°C ~ 150°C 790 mV @ 5 A
IDD15E60BUMA1

IDD15E60BUMA1

IDD15E60 - SILICON POWER DIODE

Rochester Electronics, LLC
15,000 -

RFQ

IDD15E60BUMA1

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 87 ns 50 µA @ 600 V 600 V 29.2A (DC) -40°C ~ 175°C 2 V @ 15 A
BYR29X-600,127

BYR29X-600,127

NOW WEEN - BYR29X-600 - ULTRAFAS

Rochester Electronics, LLC
5,015 -

RFQ

BYR29X-600,127

Scheda tecnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 8A 150°C (Max) 1.7 V @ 8 A
IDH16S60CAKSA1

IDH16S60CAKSA1

SIC DIODES

Rochester Electronics, LLC
14,166 -

RFQ

IDH16S60CAKSA1

Scheda tecnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 650pF @ 1V, 1MHz 0 ns 200 µA @ 600 V 600 V 16A (DC) -55°C ~ 175°C 1.7 V @ 16 A
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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