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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5820RECTIFIER, SCHOTTKY, 3A, 20V Rochester Electronics, LLC |
3,965 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 20 V | 20 V | 3A | -50°C ~ 150°C | 850 mV @ 9.4 A | |
|
HFA08TB60PBFDIODE GEN PURP 600V 8A TO220AC Rochester Electronics, LLC |
1,569 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
1N4448DIODE GEN PURP 100V 200MA DO35 Rochester Electronics, LLC |
3,421 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
NRVBB1645T4GDIODE SCHOTTKY 45V 16A D2PAK Rochester Electronics, LLC |
8,000 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 630 mV @ 16 A |
|
|
IDH10G65C5XKSA1DIODE SCHOTTKY 650V 10A TO220-2 Rochester Electronics, LLC |
3,004 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 340 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDH08G65C5XKSA1DIODE SCHOTTKY 650V 8A TO220-2 Rochester Electronics, LLC |
3,983 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 280 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
IDW30G65C5FKSA1DIODE SCHOTTKY 650V 30A TO247-3 Rochester Electronics, LLC |
12,523 | - |
RFQ |
Scheda tecnica |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 1.1 mA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |
|
1N5819GDIODE SCHOTTKY 40V 1A AXIAL Rochester Electronics, LLC |
84,437 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
|
IDH03G65C5XKSA1DIODE SCHOTTKY 650V 3A TO220-2 Rochester Electronics, LLC |
2,657 | - |
RFQ |
Scheda tecnica |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 100pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.7 V @ 3 A |
|
IDW12G65C5FKSA1DIODE SCHOTTKY 650V 12A TO247-3 Rochester Electronics, LLC |
2,322 | - |
RFQ |
Scheda tecnica |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 360pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 12A (DC) | -55°C ~ 175°C | 1.7 V @ 12 A |
|
|
IDH09G65C5XKSA1DIODE SCHOTTKY 650V 9A TO220-2 Rochester Electronics, LLC |
2,411 | - |
RFQ |
Scheda tecnica |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 270pF @ 1V, 1MHz | 0 ns | 310 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.7 V @ 9 A |
|
|
MUR120GDIODE GEN PURP 200V 1A AXIAL Rochester Electronics, LLC |
81,848 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A |
|
DLE30CDIODE GEN PURP 200V 3A AXIAL Rochester Electronics, LLC |
4,700 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 400 V | 200 V | 3A | 150°C (Max) | 980 mV @ 3 A | |
|
|
DLE30C-KC9DIODE GEN PURP 200V 3A AXIAL Rochester Electronics, LLC |
18,600 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 400 V | 200 V | 3A | 150°C (Max) | 980 mV @ 3 A | |
|
|
DLE30EDIODE GEN PURP 400V 3A AXIAL Rochester Electronics, LLC |
2,180 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 30 ns | 20 µA @ 400 V | 400 V | 3A | 150°C (Max) | 1.25 V @ 1 A | |
|
MBRD835LGDIODE SCHOTTKY 35V 8A DPAK Rochester Electronics, LLC |
3,489 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.4 mA @ 35 V | 35 V | 8A | -65°C ~ 150°C | 510 mV @ 8 A |
|
|
DLM10CDIODE GEN PURP 200V 1A DO204AL Rochester Electronics, LLC |
10,485 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | 150°C (Max) | 980 mV @ 1 A | |
|
|
DLM10EDIODE GEN PURP 400V 1A DO204AL Rochester Electronics, LLC |
2,500 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 200 V | 400 V | 1A | 150°C (Max) | 980 mV @ 1 A | |
|
|
DS135ACDIODE GEN PURP 400V 1A DO204AL Rochester Electronics, LLC |
267,187 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1A | 150°C (Max) | 1 V @ 1 A | |
|
|
DS135ADDIODE GEN PURP 200V 1A DO204AL Rochester Electronics, LLC |
31,920 | - |
RFQ |
Scheda tecnica |
Bulk,Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1A | 150°C (Max) | 1 V @ 1 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
