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Memoria

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	MemoryType	MemoryFormat	Technology	MemorySize	MemoryInterface	ClockFrequency	WriteCycleTime-WordPage	AccessTime	Voltage-Supply	OperatingTemperature	MountingType
MT49H32M9FM-33:B IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	3,740	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (32M x 9)	Parallel	300 MHz	-	20 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H64M9FM-25:B IC DRAM 576MBIT PARALLEL 144UBGA Micron Technology Inc.	3,789	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	576Mb (64M x 9)	Parallel	400 MHz	-	20 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H64M9FM-25:B TR IC DRAM 576MBIT PARALLEL 144UBGA Micron Technology Inc.	3,723	-	RFQ	Scheda tecnica	Tape & Reel (TR)	-	Discontinued at Mosen	Volatile	DRAM	DRAM	576Mb (64M x 9)	Parallel	400 MHz	-	20 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H64M9FM-25E:B IC DRAM 576MBIT PARALLEL 144UBGA Micron Technology Inc.	3,249	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	576Mb (64M x 9)	Parallel	400 MHz	-	15 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H64M9FM-25E:B TR IC DRAM 576MBIT PARALLEL 144UBGA Micron Technology Inc.	3,077	-	RFQ	Scheda tecnica	Tape & Reel (TR)	-	Discontinued at Mosen	Volatile	DRAM	DRAM	576Mb (64M x 9)	Parallel	400 MHz	-	15 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36BM-5:B IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	3,638	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	200 MHz	-	20 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36BM-TI:B IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	2,960	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	-	-	-	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36BM-TI:B TR IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	3,883	-	RFQ	Scheda tecnica	Tape & Reel (TR)	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	-	-	-	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36FM-25 IT:B IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	2,537	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	400 MHz	-	20 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount
MT49H8M36FM-25 IT:B TR IC DRAM 288MBIT PARALLEL 144UBGA Micron Technology Inc.	3,035	-	RFQ	Scheda tecnica	Tape & Reel (TR)	-	Discontinued at Mosen	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	400 MHz	-	20 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount
MT49H8M36SJ-5:B IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.	3,566	-	RFQ	Scheda tecnica	Tray	-	Obsolete	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	200 MHz	-	20 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36SJ-TI:B IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.	2,723	-	RFQ	Scheda tecnica	Tray	-	Obsolete	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	-	-	-	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT49H8M36SJ-TI:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.	2,920	-	RFQ	Scheda tecnica	Tape & Reel (TR)	-	Obsolete	Volatile	DRAM	DRAM	288Mb (8M x 36)	Parallel	-	-	-	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount
MT29E1HT08ELHBBG1-3:B IC FLASH 1.5T PARALLEL 272VBGA Micron Technology Inc.	2,814	-	RFQ		Bulk	-	Active	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-
MT29E256G08CBHBBJ4-3ES:B IC FLASH 256GBIT PAR 132VBGA Micron Technology Inc.	3,679	-	RFQ		Tray	-	Obsolete	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount
MT29E3T08EQHBBG2-3:B IC FLASH 3TB PARALLEL 333MHZ Micron Technology Inc.	3,955	-	RFQ		Tray	-	Active	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount
MT29E3T08EQHBBG2-3ES:B IC FLASH 3TB PARALLEL 333MHZ Micron Technology Inc.	2,738	-	RFQ		Tray	-	Obsolete	Non-Volatile	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount
MT29E4T08EYHBBG9-3:B IC FLASH 4TB PARALLEL 333MHZ Micron Technology Inc.	3,826	-	RFQ		Tray	-	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-
MT29E4T08EYHBBG9-3ES:B IC FLASH 4TB PARALLEL 333MHZ Micron Technology Inc.	2,916	-	RFQ		Tray	-	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	333 MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-
MT29F128G08CECGBJ4-5M:G IC FLSH 128GBIT PARALLEL 132VBGA Micron Technology Inc.	3,103	-	RFQ		Tray	-	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount