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Memoria
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | MemoryType | MemoryFormat | Technology | MemorySize | MemoryInterface | ClockFrequency | WriteCycleTime-WordPage | AccessTime | Voltage-Supply | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
R1LV0816ASB-7SI#S0IC SRAM 8MBIT PARALLEL 44TSOP II Renesas Electronics America Inc |
3,388 | - |
RFQ |
Bulk | - | Obsolete | Volatile | SRAM | SRAM | 8Mb (512K x 16) | Parallel | - | 70ns | 70 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | |
|
R1LV0816ASA-5SI#SKSRAM 8MBIT 55NS Renesas Electronics America Inc |
3,658 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
R1LV0808ASB-7SI#S0IC SRAM 8MBIT PARALLEL 44TSOP II Renesas Electronics America Inc |
2,124 | - |
RFQ |
Bulk | - | Obsolete | Volatile | SRAM | SRAM | 8Mb (1M x 8) | Parallel | - | 70ns | 70 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | |
|
R1LV0816ASD-5SI#B0IC SRAM 8MBIT PARALLEL 52TSOP II Renesas Electronics America Inc |
918 | - |
RFQ |
Tray | - | Obsolete | Volatile | SRAM | SRAM | 8Mb (1M x 8, 512K x 16) | Parallel | - | 55ns | 55 ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | |
|
R1LV0816ASA-7SI#B0IC SRAM 8MBIT PARALLEL 48TSOP I Renesas Electronics America Inc |
396 | - |
RFQ |
Bulk | - | Obsolete | Volatile | SRAM | SRAM | 8Mb (1M x 8, 512K x 16) | Parallel | - | 70ns | 70 ns | 2.4V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | |
|
HN27C4096AG12UV EPROM, 256KX16, 120NS Renesas Electronics America Inc |
3,379 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | Non-Volatile | EPROM | EPROM - UV | 4Mb (256K x 16) | Parallel | - | - | 120 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
HN27C4001G15UV EPROM, 512KX8, 150NS Renesas Electronics America Inc |
3,485 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | Non-Volatile | EPROM | EPROM - UV | 4Mb (512K x 8) | Parallel | - | - | 150 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
HN27C4001G10UV EPROM, 512KX8, 100NS Renesas Electronics America Inc |
926 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | Non-Volatile | EPROM | EPROM - UV | 4Mb (512K x 8) | Parallel | - | - | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
HN27C4096AG10UV EPROM, 256KX16, 100NS Renesas Electronics America Inc |
239 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | Non-Volatile | EPROM | EPROM - UV | 4Mb (256K x 16) | Parallel | - | - | 100 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
|
HN27C4001G12UV EPROM, 512KX8, 120NS Renesas Electronics America Inc |
168 | - |
RFQ |
Scheda tecnica |
Bulk | - | Active | Non-Volatile | EPROM | EPROM - UV | 4Mb (512K x 8) | Parallel | - | - | 120 ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole |
|
R1QEA7236ABB-20IB0STANDARD SRAM, 2MX36, 0.45NS Renesas Electronics America Inc |
341 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
M3008316045NX0IBCY8MB MRAM PARALLEL INTERFACE, 45N Renesas Electronics America Inc |
168 | - |
RFQ |
Scheda tecnica |
Tray | - | Active | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 8Mb (512K x 16) | Parallel | - | 45ns | 45 ns | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount |
|
R1QHA3636CBG-25IB036-MBIT DDR II + SRAM MEMORY Renesas Electronics America Inc |
601 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
R1QEA3636CBG-19IB036-MBIT DDR II + SRAM MEMORY Renesas Electronics America Inc |
3,435 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
R1QDA3618CBG-19IB0STANDARD SRAM, 2MX18, 0.45NS Renesas Electronics America Inc |
955 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
HM2V8100TTI5SSPEMEMORY SRAM 8M Renesas Electronics America Inc |
2,699 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
R1QEA7218ABG-22IB0STANDARD SRAM, 4MX18, 0.45NS Renesas Electronics America Inc |
2,168 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
R1QDA3636CBB-19IB0STANDARD SRAM, 1MX36, 0.45NS Renesas Electronics America Inc |
501 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
R1QDA7218ABG-20IB0STANDARD SRAM, 4MX18, 0.45NS Renesas Electronics America Inc |
127 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
UPD48288218AF1-E24-DW1-ADDR DRAM, 16MX18 Renesas Electronics America Inc |
117 | - |
RFQ |
Scheda tecnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
