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PMIC - Driver gate
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MAX4420EPA+IC GATE DRVR LOW-SIDE 8DIP Analog Devices Inc./Maxim Integrated |
3,869 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole |
|
LM5101CMA/NOPBIC GATE DRVR HALF-BRIDGE 8SOIC Texas Instruments |
523 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 1A, 1A | Non-Inverting | 118 V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
LM5100AMR/NOPBIC GATE DRVR HALF-BRIDGE 8SOPWR Texas Instruments |
200 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 3A, 3A | Non-Inverting | 118 V | 430ns, 260ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
ICL7667EBA+IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated |
170 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | - | Independent | 2 | N-Channel MOSFET | 4.5V ~ 17V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount |
|
TC4421ESMIC GATE DRVR LOW-SIDE 8SOIJ Microchip Technology |
161 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 60ns, 60ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MAX15025AATB+TIC GATE DRVR LOW-SIDE 10TDFN Analog Devices Inc./Maxim Integrated |
3,346 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 28V | 0.8V, 2V | 2A, 4A | Non-Inverting | - | 42ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
ISL78420AVEZIC GATE DRVR HALF-BRIDG 14HTSSOP Renesas Electronics America Inc |
2,595 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q100 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 1.8V, 4V | 2A, 2A | Non-Inverting | 114 V | 10ns, 10ns | -40°C ~ 125°C (TA) | Surface Mount |
|
IRS21864PBFIC GATE DRVR HI/LOW SIDE 14DIP Infineon Technologies |
405 | - |
RFQ |
Scheda tecnica |
Tube | - | Not For New Designs | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600 V | 22ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2109PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
670 | - |
RFQ |
Scheda tecnica |
Tube | - | Not For New Designs | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
TC4421CATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
207 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 60ns, 60ns | 0°C ~ 150°C (TJ) | Through Hole |
|
|
TC4422CATIC GATE DRVR LOW-SIDE TO220-5 Microchip Technology |
200 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 60ns, 60ns | 0°C ~ 150°C (TJ) | Through Hole |
|
MIC4467YWMIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
188 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | Surface Mount |
|
|
MAX4429ESA+IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated |
319 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount |
|
|
MIC4469YNIC GATE DRVR LOW-SIDE 14DIP Microchip Technology |
142 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | Through Hole |
|
|
MAX4426CSA+IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated |
3,125 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount |
|
TC4469EOEIC GATE DRVR LOW-SIDE 16SOIC Microchip Technology |
120 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 15ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
TC4469EPDIC GATE DRVR LOW-SIDE 14DIP Microchip Technology |
937 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 15ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
ICL7667EPA+IC GATE DRVR HALF-BRIDGE 8DIP Analog Devices Inc./Maxim Integrated |
147 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | - | Independent | 2 | N-Channel MOSFET | 4.5V ~ 17V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole |
|
|
LTC4441IS8-1#PBFIC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc. |
289 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel MOSFET | 5V ~ 25V | 1.8V, 2V | 6A, 6A | Non-Inverting | - | 13ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IRS2308PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
188 | - |
RFQ |
Scheda tecnica |
Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600 V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
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