PMIC - Driver gate

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
2ED21824S06JXUMA1

2ED21824S06JXUMA1

IC HALF BRIDGE GATE DRIVER 650V

Infineon Technologies
2,762 -

RFQ

2ED21824S06JXUMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Synchronous 1 IGBT, N-Channel MOSFET 10V ~ 20V 1.1V, 1.7V 2.5A, 2.5A Non-Inverting 650 V 15ns, 15ns -40°C ~ 125°C (TA) Surface Mount
IRS2113STRPBF

IRS2113STRPBF

IC GATE DRVR HALF-BRIDGE 16SOIC

Infineon Technologies
3,610 -

RFQ

IRS2113STRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 2.5A, 2.5A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) Surface Mount
IRS21864STRPBF

IRS21864STRPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies
3,761 -

RFQ

IRS21864STRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A Non-Inverting 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IRS4427SPBF

IRS4427SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies
3,656 -

RFQ

IRS4427SPBF

Scheda tecnica

Bulk,Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.5V 2.3A, 3.3A Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Surface Mount
2EDF9275FXUMA1

2EDF9275FXUMA1

IC IGBT DVR

Infineon Technologies
3,077 -

RFQ

2EDF9275FXUMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) EiceDriver™ Active Half-Bridge Independent 2 IGBT, SiC MOSFET 20V -, 1.65V 4A, 8A Non-Inverting 650 V 6.5ns, 4.5ns -40°C ~ 125°C (TA) Surface Mount
IRS2127SPBF

IRS2127SPBF

IC GATE DRVR HIGH-SIDE 8SOIC

Infineon Technologies
2,618 -

RFQ

IRS2127SPBF

Scheda tecnica

Tube - Active High-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
AUIR3241STR

AUIR3241STR

IC GATE DRVR HIGH-SIDE 8SO

Infineon Technologies
3,708 -

RFQ

AUIR3241STR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active High-Side Single 1 N-Channel MOSFET 3V ~ 36V 0.8V, 2.5V 350mA, 350mA Non-Inverting - 6µs, 6µs -40°C ~ 150°C (TJ) Surface Mount
AUIR3242STRXUMA1

AUIR3242STRXUMA1

IC GATE DRVR HIGH-SIDE DSO8-907

Infineon Technologies
3,324 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 Active High-Side Single 1 N-Channel MOSFET 3V ~ 36V 0.8V, 2.5V 350mA, 350mA Non-Inverting - 6µs, 6µs -40°C ~ 150°C (TJ) Surface Mount
IRS2183STRPBF

IRS2183STRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,494 -

RFQ

IRS2183STRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS2106SPBF

IRS2106SPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies
3,552 -

RFQ

IRS2106SPBF

Scheda tecnica

Bulk,Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IRS21867SPBF

IRS21867SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,048 -

RFQ

IRS21867SPBF

Scheda tecnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A CMOS, TTL 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IRS2109SPBF

IRS2109SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
3,466 -

RFQ

IRS2109SPBF

Scheda tecnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IRS2453DSPBF

IRS2453DSPBF

IC GATE DRVR FULL-BRIDGE 14SOIC

Infineon Technologies
3,600 -

RFQ

IRS2453DSPBF

Scheda tecnica

Tube - Active Full-Bridge Synchronous 1 N-Channel MOSFET 10V ~ 15.6V 4.7V, 9.3V 180mA, 260mA RC Input Circuit 600 V 120ns, 50ns -25°C ~ 125°C (TJ) Surface Mount
6EDL04I06PTXUMA1

6EDL04I06PTXUMA1

IC GATE DRVR HALF-BRIDGE DSO28

Infineon Technologies
2,302 -

RFQ

6EDL04I06PTXUMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk EiceDriver™ Active Half-Bridge 3-Phase 6 IGBT, N-Channel, P-Channel MOSFET 13V ~ 17.5V 1.1V, 1.7V - Non-Inverting 600 V 60ns, 26ns -40°C ~ 125°C (TJ) Surface Mount
IRS21844SPBF

IRS21844SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,252 -

RFQ

IRS21844SPBF

Scheda tecnica

Bulk,Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS2183SPBF

IRS2183SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,513 -

RFQ

IRS2183SPBF

Scheda tecnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
IRS21864SPBF

IRS21864SPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies
2,219 -

RFQ

IRS21864SPBF

Scheda tecnica

Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 4A, 4A Non-Inverting 600 V 22ns, 18ns -40°C ~ 150°C (TJ) Surface Mount
IR2111SPBF

IR2111SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies
2,499 -

RFQ

IR2111SPBF

Scheda tecnica

Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 8.3V, 12.6V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IRS2304PBF

IRS2304PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies
2,316 -

RFQ

IRS2304PBF

Scheda tecnica

Bulk,Tube - Not For New Designs Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.7V, 2.3V 290mA, 600mA Non-Inverting 600 V 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IR21814SPBF

IR21814SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies
2,594 -

RFQ

IR21814SPBF

Scheda tecnica

Bulk,Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.7V 1.9A, 2.3A Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Surface Mount
Total 960 Record«Prev1... 910111213141516...48Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente