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PMIC - Driver gate
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRS2001PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,845 | - |
RFQ |
Scheda tecnica |
Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IRS2334STRPBFIC GATE DRVR HALF-BRIDGE 20SOIC Infineon Technologies |
3,396 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Bulk | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS2334SPBFIC GATE DRVR HALF-BRIDGE 20SOIC Infineon Technologies |
2,446 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 200mA, 350mA | Non-Inverting | 600 V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRS2108PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,834 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600 V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
|
2EDS7165HXUMA1DRIVER IC PG-DSO-16 Infineon Technologies |
3,323 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | EiceDriver™ | Active | Half-Bridge | Independent | 2 | N-Channel, P-Channel MOSFET | 20V | -, 1.65V | 1A, 2A | Non-Inverting | - | 6.5ns, 4.5ns | -40°C ~ 125°C (TA) | Surface Mount |
|
IR25607STRPBFIC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies |
3,588 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600 V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IR2108PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,839 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
DHP0070N10N5AUMA1INT. POWERSTAGE/DRIVER PG-IQFN-3 Infineon Technologies |
2,506 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IR2128PBFIC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
3,418 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Active | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR21271PBFIC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies |
2,581 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Active | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole |
|
IRS21814MTRPBFIC GATE DRVR HALF-BRIDGE 16MLPQ Infineon Technologies |
2,464 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
IR21094PBFIC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
3,517 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Last Time Buy | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IRS21084PBFIC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
3,627 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600 V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
PMC41570AUMA1IFX POWERSTAGE/DRIVER Infineon Technologies |
2,743 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IR21084PBFIC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies |
3,381 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Last Time Buy | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600 V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
IR2102PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,379 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Last Time Buy | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Inverting | 600 V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
DHP1070N10N5AUMA1INT. POWERSTAGE/DRIVER PG-IQFN-3 Infineon Technologies |
3,776 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IRS2181PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
2,750 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
|
|
DHP0050N10N5AUMA1INT. POWERSTAGE/DRIVER PG-IQFN-3 Infineon Technologies |
3,312 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | OptiMOS™ | Active | Half-Bridge | Single | 2 | N-Channel MOSFET | 8V ~ 17V | - | 4A, 6A | Non-Inverting | 90 V | - | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IRS2183PBFIC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies |
3,616 | - |
RFQ |
Scheda tecnica |
Bulk,Tube | - | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting, Non-Inverting | 600 V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole |
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