PMIC - Driver gate

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
MAX5075AAUA+

MAX5075AAUA+

IC GATE DRVR LOW-SIDE 8UMAX

Analog Devices Inc./Maxim Integrated
3,021 -

RFQ

MAX5075AAUA+

Scheda tecnica

Tube - Active Low-Side Synchronous 2 N-Channel MOSFET 4.5V ~ 15V - 3A, 3A RC Input Circuit - 10ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
MAX5078BATT+T

MAX5078BATT+T

IC GATE DRVR LOW-SIDE 6TDFN

Analog Devices Inc./Maxim Integrated
2,499 -

RFQ

MAX5078BATT+T

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs Low-Side Single 1 N-Channel MOSFET 4V ~ 15V 0.8V, 2.1V 4A, 4A Inverting, Non-Inverting - 32ns, 26ns -40°C ~ 150°C (TJ) Surface Mount
LTC1155CS8#PBF

LTC1155CS8#PBF

IC GATE DRVR HIGH-SIDE 8SOIC

Analog Devices Inc.
3,432 -

RFQ

LTC1155CS8#PBF

Scheda tecnica

Tube - Active High-Side Independent 2 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2V - Non-Inverting - - 0°C ~ 70°C (TA) Surface Mount
IXDD630CI

IXDD630CI

IC GATE DRVR LOW-SIDE TO220-5

IXYS Integrated Circuits Division
3,664 -

RFQ

IXDD630CI

Scheda tecnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 12.5V ~ 35V 0.8V, 3.5V 30A, 30A Non-Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Through Hole
IXDD630YI

IXDD630YI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division
591 -

RFQ

IXDD630YI

Scheda tecnica

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 12.5V ~ 35V 0.8V, 3.5V 30A, 30A Non-Inverting - 11ns, 11ns -55°C ~ 150°C (TJ) Surface Mount
LT1161CSW#PBF

LT1161CSW#PBF

IC GATE DRVR HIGH-SIDE 20SOIC

Analog Devices Inc.
198 -

RFQ

LT1161CSW#PBF

Scheda tecnica

Tube - Active High-Side Independent 4 N-Channel MOSFET 8V ~ 48V 0.8V, 2V - Non-Inverting - - 0°C ~ 125°C (TJ) Surface Mount
UC3707N

UC3707N

IC GATE DRVR LOW-SIDE 16DIP

Texas Instruments
989 -

RFQ

UC3707N

Scheda tecnica

Tube - Active Low-Side Independent 2 N-Channel MOSFET 5V ~ 40V 0.8V, 2.2V 1.5A, 1.5A Inverting, Non-Inverting - 40ns, 40ns 0°C ~ 70°C (TA) Through Hole
UC3708N

UC3708N

IC GATE DRVR LOW-SIDE 8DIP

Texas Instruments
2,025 -

RFQ

UC3708N

Scheda tecnica

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 5V ~ 35V 0.8V, 2V 3A, 3A Non-Inverting - 25ns, 25ns 0°C ~ 70°C (TA) Through Hole
IR2130SPBF

IR2130SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies
3,132 -

RFQ

IR2130SPBF

Scheda tecnica

Tube - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
VLA542-11R

VLA542-11R

IC GATE DRVR PWR MGMT MOSFET

Powerex Inc.
3,584 -

RFQ

VLA542-11R

Scheda tecnica

Bulk - Active Half-Bridge Single 1 IGBT 14V ~ 17V - 5A, 5A CMOS - 400ns, 300ns -20°C ~ 70°C Through Hole
2SC0106T2A1-12

2SC0106T2A1-12

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations
324 -

RFQ

2SC0106T2A1-12

Scheda tecnica

Tray SCALE™-2 Active Half-Bridge Independent 2 IGBT 14.5V ~ 15.5V - 6A, 6A - 1200 V 20ns, 13ns -40°C ~ 105°C (TA) Surface Mount
VLA500-01

VLA500-01

IC GATE DRVR LOW-SIDE MODULE

Powerex Inc.
738 -

RFQ

VLA500-01

Scheda tecnica

Bulk - Active Low-Side Single 1 IGBT 14.2V ~ 15.8V - 12A, 12A Non-Inverting - 300ns, 300ns -20°C ~ 60°C (TA) Through Hole
2SC0108T2G0-17

2SC0108T2G0-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
243 -

RFQ

2SC0108T2G0-17

Scheda tecnica

Tray SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT 14.5V ~ 15.5V - 8A, 8A - 1700 V 17ns, 15ns -40°C ~ 85°C (TA) Surface Mount
2SC0108T2D0-12

2SC0108T2D0-12

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
432 -

RFQ

2SC0108T2D0-12

Scheda tecnica

Tray SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT 14.5V ~ 15.5V - 8A, 8A - 1200 V 17ns, 15ns -40°C ~ 85°C (TA) Surface Mount
2SP0115T2B0-12

2SP0115T2B0-12

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations
138 -

RFQ

2SP0115T2B0-12

Scheda tecnica

Tray SCALE™-2 Active Half-Bridge Independent 2 IGBT 14.5V ~ 15.5V - 8A, 15A - 1200 V 5ns, 10ns -20°C ~ 85°C (TA) Surface Mount
2SC0435T2H0-17

2SC0435T2H0-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
612 -

RFQ

2SC0435T2H0-17

Scheda tecnica

Tray SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 14.5V ~ 15.5V - 35A, 35A - 1700 V 20ns, 20ns -40°C ~ 85°C (TA) Surface Mount
2SC0435T2F1-17

2SC0435T2F1-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
509 -

RFQ

2SC0435T2F1-17

Scheda tecnica

Tray SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT 14.5V ~ 15.5V - 35A, 35A - 1700 V 20ns, 20ns -40°C ~ 85°C (TA) Surface Mount
2SD106AI-17 UL

2SD106AI-17 UL

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations
177 -

RFQ

2SD106AI-17 UL

Scheda tecnica

Tray SCALE™-1 Not For New Designs Half-Bridge - 2 IGBT, N-Channel, P-Channel MOSFET 15V - 6A, 6A - - 100ns, 80ns -40°C ~ 85°C (TA) Surface Mount
2SD315AI

2SD315AI

IC GATE DRVR HALF-BRIDGE MODULE

Power Integrations
356 -

RFQ

2SD315AI

Scheda tecnica

Tray SCALE™-1 Active Half-Bridge - 2 IGBT, N-Channel, P-Channel MOSFET - - 18A, 18A - - 160ns, 130ns -40°C ~ 85°C Through Hole
2SC0650P2A0-17

2SC0650P2A0-17

IC GATE DRVR HI/LOW SIDE MODULE

Power Integrations
3,311 -

RFQ

2SC0650P2A0-17

Scheda tecnica

Bulk SCALE™-2 Active High-Side or Low-Side Independent 2 IGBT 14.5V ~ 15.5V - 50A, 50A - 1700 V 25ns, 25ns -40°C ~ 85°C (TA) Surface Mount
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1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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