PMIC - Driver gate

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IR21368SPBF

IR21368SPBF

HALF BRIDGE BASED MOSFET DRIVER

International Rectifier
2,903 -

RFQ

IR21368SPBF

Scheda tecnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS2183PBF

IRS2183PBF

IRS2183 - GATE DRIVER

International Rectifier
3,953 -

RFQ

IRS2183PBF

Scheda tecnica

Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 1.9A, 2.3A Inverting, Non-Inverting 600 V 40ns, 20ns -40°C ~ 150°C (TJ) Through Hole
IR21365SPBF

IR21365SPBF

3-PHASE BRIDGE DRIVER

International Rectifier
3,274 -

RFQ

IR21365SPBF

Scheda tecnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 3V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21368STRPBF-IR

IR21368STRPBF-IR

HALF BRIDGE BASED MOSFET DRIVER

International Rectifier
3,227 -

RFQ

IR21368STRPBF-IR

Scheda tecnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.4V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 125°C (TA) Surface Mount
IR21363SPBF

IR21363SPBF

3-PHASE BRIDGE DRIVER

International Rectifier
2,924 -

RFQ

IR21363SPBF

Scheda tecnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 3V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2131PBF

IR2131PBF

HALF BRIDGE BASED MOSFET DRIVER

International Rectifier
2,972 -

RFQ

IR2131PBF

Scheda tecnica

Bulk - Active Half-Bridge Independent 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IR2131JPBF

IR2131JPBF

HALF BRIDGE BASED MOSFET DRIVER

International Rectifier
3,180 -

RFQ

IR2131JPBF

Scheda tecnica

Bulk - Active Half-Bridge Independent 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IRS26302DJPBF-IR

IRS26302DJPBF-IR

HALF BRIDGE BASED IGBT/MOSFET DR

International Rectifier
2,300 -

RFQ

IRS26302DJPBF-IR

Scheda tecnica

Bulk * Active - - - - - - - - - - - -
IR2235PBF

IR2235PBF

3-PHASE BRIDGE DRIVER

International Rectifier
2,048 -

RFQ

IR2235PBF

Scheda tecnica

Bulk - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Through Hole
IRS2118SPBF

IRS2118SPBF

IRS2118 - GATE DRIVER

International Rectifier
2,045 -

RFQ

IRS2118SPBF

Scheda tecnica

Bulk - Active High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 290mA, 600mA Inverting 600 V 75ns, 35ns -40°C ~ 150°C (TJ) Surface Mount
IR25603PBF

IR25603PBF

IR25603 - GATE DRIVER

International Rectifier
2,138 -

RFQ

IR25603PBF

Scheda tecnica

Bulk - Active Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - 180mA, 260mA RC Input Circuit 600 V 80ns, 45ns -40°C ~ 150°C (TJ) Through Hole
IR4426PBF

IR4426PBF

IR4426 - GATE DRIVER

International Rectifier
3,589 -

RFQ

IR4426PBF

Scheda tecnica

Bulk - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Through Hole
IRS2117PBF

IRS2117PBF

IRS2117 - GATE DRIVER

International Rectifier
3,957 -

RFQ

IRS2117PBF

Scheda tecnica

Bulk - Active High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 290mA, 600mA Non-Inverting 600 V 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IR2102STRPBF

IR2102STRPBF

IR2102S - GATE DRIVER

International Rectifier
2,653 -

RFQ

IR2102STRPBF

Scheda tecnica

Bulk * Active - - - - - - - - - - - -
IR21271PBF

IR21271PBF

IR21271 - GATE DRIVER

International Rectifier
2,449 -

RFQ

IR21271PBF

Scheda tecnica

Bulk - Active High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 9V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
IRS2112PBF

IRS2112PBF

IRS2112 - GATE DRIVER

International Rectifier
3,507 -

RFQ

IRS2112PBF

Scheda tecnica

Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 290mA, 600mA Non-Inverting 600 V 75ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IRS21091PBF

IRS21091PBF

IRS21091 - GATE DRIVER

International Rectifier
3,321 -

RFQ

IRS21091PBF

Scheda tecnica

Bulk - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IR21094PBF

IR21094PBF

IR21094 - GATE DRIVER

International Rectifier
2,082 -

RFQ

IR21094PBF

Scheda tecnica

Bulk - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IRS21084PBF

IRS21084PBF

IRS21084 - GATE DRIVER

International Rectifier
2,003 -

RFQ

IRS21084PBF

Scheda tecnica

Bulk - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Inverting, Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IRS21064PBF

IRS21064PBF

IRS21064 - GATE DRIVER

International Rectifier
2,664 -

RFQ

IRS21064PBF

Scheda tecnica

Bulk - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 600 V 100ns, 35ns -40°C ~ 150°C (TJ) Through Hole
Total 167 Record«Prev12345...9Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente