+86 075582561136
Carica BOM
PMIC - Driver gate
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | DrivenConfiguration | ChannelType | NumberofDrivers | GateType | Voltage-Supply | LogicVoltage-VILVIH | Current-PeakOutput(SourceSink) | InputType | HighSideVoltage-Max(Bootstrap) | Rise/FallTime(Typ) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TC4426CPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,490 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 19ns, 19ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
TC4427CPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,281 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
TC4428CPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,013 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
TC427CPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,224 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 30ns, 30ns | 0°C ~ 70°C (TA) | Through Hole |
|
|
TC4428AEPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,080 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole |
|
|
TC4427VPAIC GATE DRVR LOW-SIDE 8DIP Microchip Technology |
3,726 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 19ns, 19ns | -40°C ~ 125°C (TA) | Through Hole |
|
MIC4124YMEIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,390 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
LM5105SD/NOPBIC GATE DRVR HALF-BRIDGE 10WSON Texas Instruments |
3,774 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8V ~ 14V | 0.8V, 2.2V | 1.8A, 1.8A | Non-Inverting | 118 V | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
TPS2829DBVTIC GATE DRVR LOW-SIDE SOT23-5 Texas Instruments |
2,699 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 14V | 1V, 4V | 2A, 2A | Non-Inverting | - | 14ns, 14ns | -40°C ~ 125°C (TA) | Surface Mount |
|
MIC4424YMIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,174 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
MIC4420YMIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,771 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
LMG1205YFXRIC GATE DRVR HALF-BRIDGE 12DSBGA Texas Instruments |
3,333 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | - | 1.2A, 5A | TTL | 100 V | 7ns, 3.5ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
MIC4224YM-TRIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,599 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
IXDD609PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
2,352 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXDN609PIIC GATE DRVR LOW-SIDE 8DIP IXYS Integrated Circuits Division |
3,000 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole |
|
IXDN609SIAIC GATE DRVR LOW-SIDE 8SOIC IXYS Integrated Circuits Division |
3,761 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount |
|
LM5104SD/NOPBIC GATE DRVR HALF-BRIDGE 10WSON Texas Instruments |
3,749 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9V ~ 14V | 0.8V, 2.2V | 1.6A, 1.6A | Inverting, Non-Inverting | 118 V | 600ns, 600ns | -40°C ~ 125°C (TJ) | Surface Mount |
|
|
TC4429EOAIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
3,461 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
TC4420EOAIC GATE DRVR LOW-SIDE 8SOIC Microchip Technology |
2,058 | - |
RFQ |
Scheda tecnica |
Tube | - | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount |
|
MIC4606-2YTS-TRIC GATE DRVR FULL-BRIDGE 16TSSOP Microchip Technology |
3,908 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | Full-Bridge | Synchronous | 4 | N-Channel MOSFET | 5.25V ~ 16V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108 V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
- 1800+ Produttori mondiali
- 15,000+ Magazzino in stock
