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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SD2129,LS4ALPSQ(MTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,029 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 2V @ 12mA, 3A | 100µA (ICBO) | 2000 @ 1.5A, 3V | 2 W | - | 150°C (TJ) | Through Hole |
|
2SD2206(T6CANO,F,MTRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
3,457 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206(T6CNO,A,F)TRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,199 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206(TE6,F,M)TRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,622 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206,T6F(JTRANS NPN 100V 2A TO92MOD Toshiba Semiconductor and Storage |
2,513 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 100 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2206A(T6SEP,F,MTRANS NPN 120V 2A TO92MOD Toshiba Semiconductor and Storage |
2,699 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 120 V | 1.5V @ 1mA, 1A | - | 2000 @ 1A, 2V | 900 mW | - | 150°C (TJ) | Through Hole |
|
|
2SD2257(CANO,A,Q)TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,957 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257(CANO,Q,M)TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,686 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257(Q,M)TRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
2,559 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257,KEHINQ(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,737 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257,NIKKIQ(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,007 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2257,Q(JTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,823 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 1.5V @ 1.5mA, 1.5A | 10µA (ICBO) | 2000 @ 2A, 2V | 2 W | - | 150°C (TJ) | Through Hole |
|
|
2SD2695(T6CANO,A,FTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
2,096 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2695(T6CANO,F,MTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
3,010 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2695(T6CNO,A,F)TRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
2,764 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2695,T6F(JTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
2,789 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SD2695,T6F(MTRANS NPN 60V 2A TO92MOD Toshiba Semiconductor and Storage |
3,651 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 2 A | 60 V | 1.5V @ 1mA, 1A | 10µA (ICBO) | 2000 @ 1A, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
TTC009,F(JTRANS NPN 80V 3A TO220NIS Toshiba Semiconductor and Storage |
3,889 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 80 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 100 @ 500mA, 5V | 2 W | 150MHz | 150°C (TJ) | Through Hole |
|
|
TTC009,F(MTRANS NPN 80V 3A TO220NIS Toshiba Semiconductor and Storage |
2,494 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 80 V | 500mV @ 100mA, 1A | 100nA (ICBO) | 100 @ 500mA, 5V | 2 W | 150MHz | 150°C (TJ) | Through Hole |
|
|
2SA1020-Y,F(MTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
2,802 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
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