Altre categorie di prodotti

Transistor - Bipolare (BJT) - Singolo

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	DCCurrentGain(hFE)(Min)@IcVce	Power-Max	Frequency-Transition	OperatingTemperature	MountingType
ICA32V19X1SA1 CHIP BARE DIE Infineon Technologies	2,981	-	RFQ	Scheda tecnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
ICA32V20X1SA1 CHIP BARE DIE Infineon Technologies	3,530	-	RFQ	Scheda tecnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
ICA32V21X1SA1 CHIP BARE DIE Infineon Technologies	2,703	-	RFQ	Scheda tecnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
ICA32V22X1SA1 CHIP BARE DIE Infineon Technologies	2,929	-	RFQ	Scheda tecnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
ICA32V23X1SA1 CHIP BARE DIE Infineon Technologies	2,533	-	RFQ	Scheda tecnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
2SA1869-Y,MTSAQ(J TRANS PNP 50V 3A TO220NIS Toshiba Semiconductor and Storage	3,878	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	3 A	50 V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	10 W	100MHz	150°C (TJ)	Through Hole
2SA1869-Y,Q(J TRANS PNP 50V 3A TO220NIS Toshiba Semiconductor and Storage	3,792	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	3 A	50 V	600mV @ 200mA, 2A	1µA (ICBO)	70 @ 500mA, 2V	10 W	100MHz	150°C (TJ)	Through Hole
2SA1930(LBS2MATQ,M TRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage	3,324	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	2 A	180 V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2 W	200MHz	150°C (TJ)	Through Hole
2SA1930(ONK,Q,M) TRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage	3,244	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	2 A	180 V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2 W	200MHz	150°C (TJ)	Through Hole
2SA1930,CKQ(J TRANS PNP 180V 2A TO220NIS Toshiba Semiconductor and Storage	2,247	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	2 A	180 V	1V @ 100mA, 1A	5µA (ICBO)	100 @ 100mA, 5V	2 W	200MHz	150°C (TJ)	Through Hole
2SB1495,Q(M TRANS PNP 100V 3A TO220NIS Toshiba Semiconductor and Storage	3,505	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	3 A	100 V	1.5V @ 1.5mA, 1.5A	10µA (ICBO)	2000 @ 2A, 2V	2 W	-	150°C (TJ)	Through Hole
2SC1627A-O,PASF(M TRANS NPN 80V 0.4A TO92MOD Toshiba Semiconductor and Storage	2,785	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	400 mA	80 V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800 mW	100MHz	150°C (TJ)	Through Hole
2SC1627A-Y,PASF(M TRANS NPN 80V 0.4A TO92MOD Toshiba Semiconductor and Storage	3,407	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	400 mA	80 V	400mV @ 20mA, 200A	100nA (ICBO)	70 @ 50mA, 2V	800 mW	100MHz	150°C (TJ)	Through Hole
2SC2229(TE6SAN1F,M TRANS NPN 150V 0.05A TO92MOD Toshiba Semiconductor and Storage	2,683	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	50 mA	150 V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800 mW	120MHz	150°C (TJ)	Through Hole
2SC2229-O(MIT1F,M) TRANS NPN 150V 0.05A TO92MOD Toshiba Semiconductor and Storage	3,195	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	50 mA	150 V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800 mW	120MHz	150°C (TJ)	Through Hole
BDV64A TRANS PNP 80V 12A TO218 Central Semiconductor Corp	3,924	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	PNP	12 A	80 V	-	-	1000 @ 5A, 4V	125 W	60MHz	-	Through Hole
BDV65 TRANS NPN 60V 12A TO218 Central Semiconductor Corp	2,034	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	12 A	60 V	-	-	1000 @ 5A, 4V	125 W	60MHz	-	Through Hole
BDV65A TRANS NPN 80V 12A TO218 Central Semiconductor Corp	2,398	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	12 A	80 V	-	-	1000 @ 5A, 4V	125 W	60MHz	-	Through Hole
BDW83A TRANS NPN 60V 15A TO218 Central Semiconductor Corp	3,889	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	15 A	60 V	-	-	750 @ 6A, 3V	130 W	-	-	Through Hole
BDW83B TRANS NPN 80V 15A TO218 Central Semiconductor Corp	2,252	-	RFQ	Scheda tecnica	Bulk	-	Obsolete	NPN	15 A	80 V	-	-	750 @ 6A, 3V	130 W	-	-	Through Hole