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Transistor - Bipolare (BJT) - Singolo
| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SA1428-O,T2CLAF(JTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
3,417 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1428-O,T2CLAF(MTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
3,982 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1428-O,T2WNLF(JTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
3,662 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1428-Y(T2TR,A,FTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
2,362 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1428-Y,T2F(JTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
2,826 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1428-Y,T2F(MTRANS PNP 50V 2A MSTM Toshiba Semiconductor and Storage |
3,044 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1429-Y(T2OMI,FMTRANS PNP 80V 2A MSTM Toshiba Semiconductor and Storage |
2,740 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 80MHz | 150°C (TJ) | Through Hole |
|
|
2SA1429-Y(T2TR,F,MTRANS PNP 80V 2A MSTM Toshiba Semiconductor and Storage |
2,567 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 80 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 70 @ 500mA, 2V | 1 W | 80MHz | 150°C (TJ) | Through Hole |
|
2SA1680(F,M)TRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
2,617 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1680(T6DNSO,F,MTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,383 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1680,F(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,064 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1680,T6ASTIF(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,169 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1680,T6F(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
2,656 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1680,T6SCMDF(JTRANS PNP 50V 2A TO92MOD Toshiba Semiconductor and Storage |
3,774 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 2 A | 50 V | 500mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1761,F(JTRANS PNP 50V 3A TO92MOD Toshiba Semiconductor and Storage |
2,900 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 3 A | 50 V | 500mV @ 75mA, 1.5A | 100nA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
|
2SA1761,T6F(JTRANS PNP 50V 3A TO92MOD Toshiba Semiconductor and Storage |
3,180 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | PNP | 3 A | 50 V | 500mV @ 75mA, 1.5A | 100nA (ICBO) | 120 @ 100mA, 2V | 900 mW | 100MHz | 150°C (TJ) | Through Hole |
|
KSD794AYSTRANS NPN 60V 3A TO126-3 onsemi |
2,428 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 3 A | 60 V | 2V @ 150mA, 1.5A | 1µA (ICBO) | 160 @ 500mA, 5V | 1 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
KSC3503ESTUTRANS NPN 300V 0.1A TO126-3 onsemi |
3,290 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 100 mA | 300 V | 600mV @ 2mA, 20mA | 100nA (ICBO) | 100 @ 10mA, 10V | 7 W | 150MHz | -55°C ~ 150°C (TJ) | Through Hole |
|
|
KSC3502ESTRANS NPN 200V 0.1A TO126-3 onsemi |
3,165 | - |
RFQ |
Scheda tecnica |
Bulk | - | Obsolete | NPN | 100 mA | 200 V | 600mV @ 2mA, 20mA | 100nA (ICBO) | 100 @ 10mA, 10V | 1.2 W | 150MHz | 150°C (TJ) | Through Hole |
|
|
KSC3502ESTUTRANS NPN 200V 0.1A TO126-3 onsemi |
3,955 | - |
RFQ |
Scheda tecnica |
Tube | - | Obsolete | NPN | 100 mA | 200 V | 600mV @ 2mA, 20mA | 100nA (ICBO) | 100 @ 10mA, 10V | 1.2 W | 150MHz | 150°C (TJ) | Through Hole |
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