Transistor - FET, MOSFET - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
ALD114804ASCL

ALD114804ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.
2,678 -

RFQ

ALD114804ASCL

Scheda tecnica

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
SLA5075

SLA5075

MOSFET 6N-CH 500V 5A 15-SIP

Sanken
2,311 -

RFQ

SLA5075

Scheda tecnica

Tube - Not For New Designs 6 N-Channel (3-Phase Bridge) Standard 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 5W 150°C (TJ) Through Hole
ALD110908APAL

ALD110908APAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,522 -

RFQ

ALD110908APAL

Scheda tecnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114835PCL

ALD114835PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.
2,677 -

RFQ

ALD114835PCL

Scheda tecnica

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
SMA5112

SMA5112

MOSFET 6N-CH 250V 7A 12-SIP

Sanken
2,816 -

RFQ

SMA5112

Scheda tecnica

Tube - Active 6 N-Channel (3-Phase Bridge) Standard 250V 7A 500mOhm @ 3.5A, 10V 4V @ 1mA - 450pF @ 10V 4W 150°C (TJ) Through Hole
ALD1110EPAL

ALD1110EPAL

MOSFET 2N-CH 10V 8DIP

Advanced Linear Devices Inc.
2,052 -

RFQ

ALD1110EPAL

Scheda tecnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10V - 500Ohm @ 5V 1.01V @ 1µA - 2.5pF @ 5V 600mW 0°C ~ 70°C (TJ) Through Hole
ALD1110ESAL

ALD1110ESAL

MOSFET 2N-CH 10V 8SOIC

Advanced Linear Devices Inc.
3,813 -

RFQ

ALD1110ESAL

Scheda tecnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10V - 500Ohm @ 5V 1.01V @ 1µA - 2.5pF @ 5V 600mW 0°C ~ 70°C (TJ) Surface Mount
ALD310700ASCL

ALD310700ASCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.
2,908 -

RFQ

ALD310700ASCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
ALD310702ASCL

ALD310702ASCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.
3,100 -

RFQ

ALD310702ASCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
ALD310704ASCL

ALD310704ASCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.
2,775 -

RFQ

ALD310704ASCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
ALD310708ASCL

ALD310708ASCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.
2,576 -

RFQ

ALD310708ASCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
ALD210808APCL

ALD210808APCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.
2,553 -

RFQ

ALD210808APCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD210808ASCL

ALD210808ASCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.
3,040 -

RFQ

ALD210808ASCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD212908APAL

ALD212908APAL

MOSFET 2N-CH 10.6V 0.08A 8DIP

Advanced Linear Devices Inc.
3,539 -

RFQ

ALD212908APAL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD212908ASAL

ALD212908ASAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.
2,576 -

RFQ

ALD212908ASAL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD310704PCL

ALD310704PCL

MOSFET 4 P-CH 8V 16DIP

Advanced Linear Devices Inc.
2,261 -

RFQ

ALD310704PCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Through Hole
ALD310708PCL

ALD310708PCL

MOSFET 4 P-CH 8V 16DIP

Advanced Linear Devices Inc.
3,580 -

RFQ

ALD310708PCL

Scheda tecnica

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Through Hole
ALD1101BPAL

ALD1101BPAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,117 -

RFQ

ALD1101BPAL

Scheda tecnica

Tube - Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1102BPAL

ALD1102BPAL

MOSFET 2P-CH 10.6V 8DIP

Advanced Linear Devices Inc.
2,844 -

RFQ

ALD1102BPAL

Scheda tecnica

Tube - Active 2 P-Channel (Dual) Matched Pair Standard 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114804APCL

ALD114804APCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.
2,870 -

RFQ

ALD114804APCL

Scheda tecnica

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
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