Transistor - FET, MOSFET - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
BSL316CL6327

BSL316CL6327

P-CHANNEL MOSFET

Infineon Technologies
3,961 -

RFQ

BSL316CL6327

Scheda tecnica

Bulk OptiMOS™ Active N and P-Channel Logic Level Gate 30V 1.4A, 1.5A 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6nC @ 5V 94pF @ 15V 500mW -55°C ~ 150°C (TJ) Surface Mount
BSL806NL6327

BSL806NL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
3,103 -

RFQ

BSL806NL6327

Scheda tecnica

Bulk OptiMOS™ Active 2 N-Channel (Dual) Logic Level Gate 20V 2.3A 57mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 259pF @ 10V 500mW -55°C ~ 150°C (TJ) Surface Mount
BSL215PL6327

BSL215PL6327

P-CHANNEL MOSFET

Infineon Technologies
3,631 -

RFQ

BSL215PL6327

Scheda tecnica

Bulk OptiMOS™ Active 2 P-Channel (Dual) Logic Level Gate 20V 1.5A 150mOhm @ 1.5A, 4.5V 1.2V @ 11µA 3.55nC @ 4.5V 346pF @ 15V 500mW -55°C ~ 150°C (TJ) Surface Mount
BSO303P

BSO303P

P-CHANNEL POWER MOSFET

Infineon Technologies
2,844 -

RFQ

BSO303P

Scheda tecnica

Bulk OptiMOS™ Active 2 P-Channel (Dual) Logic Level Gate 30V 8.2A 21mOhm @ 8.2A, 10V 2V @ 100µA 72.5nC @ 10V 1761pF @ 25V 2W -55°C ~ 150°C (TJ) Surface Mount
IPG20N04S409AATMA1

IPG20N04S409AATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
3,502 -

RFQ

IPG20N04S409AATMA1

Scheda tecnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active 2 N-Channel (Dual) Standard 40V 20A (Tc) 8.6mOhm @ 17A, 10V 4V @ 22µA 28nC @ 10V 2250pF @ 25V 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPG20N06S2L-35AATMA1

IPG20N06S2L-35AATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,218 -

RFQ

IPG20N06S2L-35AATMA1

Scheda tecnica

Bulk * Active - - - - - - - - - - -
BSZ105N04NSG

BSZ105N04NSG

OPTLMOS POWER-MOSFET

Infineon Technologies
2,851 -

RFQ

BSZ105N04NSG

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IPP60R280E6

IPP60R280E6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,612 -

RFQ

IPP60R280E6

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IPI60R199CP

IPI60R199CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,648 -

RFQ

Bulk * Active - - - - - - - - - - -
IPP60R380E6

IPP60R380E6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,822 -

RFQ

IPP60R380E6

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IPI60R165CP

IPI60R165CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,800 -

RFQ

IPI60R165CP

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IPA60R280E6

IPA60R280E6

600V 0.28OHM N-CHANNEL MOSFET

Infineon Technologies
2,902 -

RFQ

IPA60R280E6

Scheda tecnica

Bulk * Active - - - - - - - - - - -
AUIRFS4410ZTRL-INF

AUIRFS4410ZTRL-INF

AUTOMOTIVE HEXFET N CHANNEL

Infineon Technologies
3,108 -

RFQ

AUIRFS4410ZTRL-INF

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IPL60R385CP

IPL60R385CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,812 -

RFQ

IPL60R385CP

Scheda tecnica

Bulk * Active - - - - - - - - - - -
IRFI4212H-117PXKMA1

IRFI4212H-117PXKMA1

MOSFET 2N-CH 100V 11A TO220-5

Infineon Technologies
2,218 -

RFQ

IRFI4212H-117PXKMA1

Scheda tecnica

Tube - Active 2 N-Channel (Dual) Standard 100V 11A (Tc) 72.5mOhm @ 6.6A, 10V 5V @ 250µA 18nC @ 10V 490pF @ 50V 18W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4019H-117PXKMA1

IRFI4019H-117PXKMA1

MOSFET 2N-CH 150V 8.7A TO220-5

Infineon Technologies
3,872 -

RFQ

IRFI4019H-117PXKMA1

Scheda tecnica

Tube - Active 2 N-Channel (Dual) Standard 150V 8.7A (Tc) 95mOhm @ 5.2A, 10V 4.9V @ 50µA 20nC @ 10V 810pF @ 25V 18W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4020H-117PXKMA1

IRFI4020H-117PXKMA1

MOSFET 2N-CH 200V 9.1A TO-220

Infineon Technologies
2,630 -

RFQ

IRFI4020H-117PXKMA1

Scheda tecnica

Tube - Active 2 N-Channel (Dual) Standard 200V 9.1A (Tc) 100mOhm @ 5.5A, 10V 4.9V @ 100µA 29nC @ 10V 1240pF @ 25V 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
FF11MR12W1M1B70BPSA1

FF11MR12W1M1B70BPSA1

LOW POWER EASY AG-EASY1B-2

Infineon Technologies
3,971 -

RFQ

FF11MR12W1M1B70BPSA1

Scheda tecnica

Tray CoolSiC™+ Obsolete 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V 20mW (Tc) -40°C ~ 150°C (TJ) Chassis Mount
FS03MR12A6MA1BBPSA1

FS03MR12A6MA1BBPSA1

HYBRID PACK DRIVE SIC AG-HYBRIDD

Infineon Technologies
3,538 -

RFQ

FS03MR12A6MA1BBPSA1

Scheda tecnica

Tray HybridPACK™ Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42500pF @ 600V 20mW -40°C ~ 150°C (TJ) Chassis Mount
IRF7501TRPBF

IRF7501TRPBF

MOSFET 2N-CH 20V 2.4A MICRO8

Infineon Technologies
2,778 -

RFQ

IRF7501TRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy 2 N-Channel (Dual) Logic Level Gate 20V 2.4A 135mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W -55°C ~ 150°C (TJ) Surface Mount
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