Transistor - FET, MOSFET - Array

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
APTSM120AM25CT3AG

APTSM120AM25CT3AG

POWER MODULE - SIC

Microsemi Corporation
3,394 -

RFQ

Bulk - Active 2 N-Channel (Dual), Schottky Silicon Carbide (SiC) 1200V (1.2kV) 148A (Tc) 25mOhm @ 80A, 20V 3V @ 4mA 544nC @ 20V 10200pF @ 1000V 937W -40°C ~ 175°C (TJ) Chassis Mount
APTSM120AM55CT1AG

APTSM120AM55CT1AG

POWER MODULE - SIC

Microsemi Corporation
3,626 -

RFQ

Bulk - Active 2 N-Channel (Dual), Schottky Silicon Carbide (SiC) 1200V (1.2kV) 74A (Tc) 50mOhm @ 40A, 20V 3V @ 2mA 272nC @ 20V 5120pF @ 1000V 470W -40°C ~ 175°C (TJ) Chassis Mount
APTSM120TAM33CTPAG

APTSM120TAM33CTPAG

POWER MODULE - SIC

Microsemi Corporation
3,947 -

RFQ

Bulk - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 112A (Tc) 33mOhm @ 60A, 20V 3V @ 3mA 408nC @ 20V 7680pF @ 1000V 714W -40°C ~ 175°C (TJ) Chassis Mount
Total 103 Record«Prev123456Next»
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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