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Transistor - FET, MOSFET - RF

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
A3G26D055N-2400 RF REFERENCE CIRCUIT 28W 2400MHZ NXP USA Inc.	3,674	-	RFQ	Scheda tecnica	Bulk	-	Active	GaN	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V
A3G26D055N-100 RF REF CIRCUIT 25W 100-2800MHZ NXP USA Inc.	2,092	-	RFQ	Scheda tecnica	Bulk	-	Active	GaN	100MHz ~ 2.69GHz	13.9dB	48 V	-	-	40 mA	8W	125 V
IGT5259CW50 GAN, RF POWER TRANSISTOR, C-BAND Integra Technologies Inc.	2,171	-	RFQ	Scheda tecnica	Tray	*	Active	-	-	-	-	-	-	-	-	-
CGH27030S-AMP1 AMPLIFIER, 1.8-2.2GHZ, CGH27030S Wolfspeed, Inc.	2,947	-	RFQ	Scheda tecnica	Bulk	GaN	Active	HEMT	6GHz	21.1dB	28 V	-	-	200 mA	30W	120 V
IGN0912LM500 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	3,861	-	RFQ	Scheda tecnica	Tray	*	Active	-	-	-	-	-	-	-	-	-
IGN2729M400R2 GAN, RF POWER TRANSISTOR, S-BAND Integra Technologies Inc.	2,295	-	RFQ	Scheda tecnica	Tray	*	Active	-	-	-	-	-	-	-	-	-
BLS8G2731LS-400PU RF FET LDMOS 65V 13DB SOT539B Ampleon USA Inc.	2,689	-	RFQ	Scheda tecnica	Tray	-	Discontinued at Mosen	LDMOS (Dual), Common Source	3.1GHz	13dB	32 V	-	-	200 mA	400W	65 V
MRF6VP21KHR5 FET RF 2CH 110V 225MHZ NI-1230 NXP USA Inc.	2,201	-	RFQ	Scheda tecnica	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS (Dual)	225MHz	24dB	50 V	-	-	150 mA	1000W	110 V
IGN1214M300 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	3,891	-	RFQ	Scheda tecnica	Tray	*	Active	-	-	-	-	-	-	-	-	-
MRF24G300HS-2STG RF REFERENCE CIRCUIT 300W 2400MH NXP USA Inc.	3,984	-	RFQ	Scheda tecnica	Bulk	-	Active	GaN	2.4GHz ~ 2.5GHz	15.3dB	48 V	-	-	-	336W	125 V
MRF24G300HS-2UP RF REFERENCE CIRCUIT 600W 2400MH NXP USA Inc.	2,459	-	RFQ	Scheda tecnica	Bulk	-	Active	GaN	2.4GHz ~ 2.5GHz	15.3dB	48 V	-	-	-	336W	125 V
BLL6H1214LS-250,11 RF FET LDMOS 100V 17DB SOT502B Ampleon USA Inc.	3,850	-	RFQ	Scheda tecnica	Tray	-	Last Time Buy	LDMOS	1.2GHz ~ 1.4GHz	17dB	50 V	42A	-	100 mA	250W	100 V
2SK772E 2SK772 - N-CHANNEL JUNCTION SILI Sanyo	3,086	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
ON5173118 NEXPERIA ON5173 0, D2PAK NXP Semiconductors	3,365	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
A7101CLTK2/T0BC27J A71CL - PLUG & TRUST, FOR IOT NXP Semiconductors	3,568	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
2SK1069-4-TL-E 2SK1069 - N-CHANNEL JUNCTION SIL Sanyo	3,744	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
MRFIC1501R2 WIDE BAND LOW POWER AMPLIFIER, 1 Freescale Semiconductor	2,016	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
A2T27S007NT1 A2T27S007 - 400-2700 MHZ, 28.8 D NXP Semiconductors	984	-	RFQ		Bulk	-	Obsolete	LDMOS	400MHz ~ 2.7GHz	18.9dB	28 V	10µA	-	60 mA	28.8dBm	65 V
MHT1008NT1 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	800	-	RFQ	Scheda tecnica	Bulk	*	Active	-	-	-	-	-	-	-	-	-
TA9110K PA RF GAN PWR 6W .03-4GHZ 32V Tagore Technology	2,513	-	RFQ	Scheda tecnica	Tray	-	Active	GaN HEMT	30MHz ~ 4GHz	17dB	32 V	500mA	-	40 mA	6W	120 V