Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT12057B2LLG

APT12057B2LLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology
2,974 -

RFQ

APT12057B2LLG

Scheda tecnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 6200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26M100JCU2

APT26M100JCU2

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
3,111 -

RFQ

APT26M100JCU2

Scheda tecnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT26M100JCU3

APT26M100JCU3

MOSFET N-CH 1000V 26A SOT227

Microchip Technology
2,631 -

RFQ

APT26M100JCU3

Scheda tecnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT50M50L2LLG

APT50M50L2LLG

MOSFET N-CH 500V 89A 264 MAX

Microchip Technology
3,823 -

RFQ

APT50M50L2LLG

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 89A (Tc) - 50mOhm @ 44.5A, 10V 5V @ 5mA 200 nC @ 10 V - 10550 pF @ 25 V - - - Through Hole
APT50M85JVR

APT50M85JVR

MOSFET N-CH 500V 50A ISOTOP

Microchip Technology
3,223 -

RFQ

APT50M85JVR

Scheda tecnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) - 85mOhm @ 500mA, 10V 4V @ 1mA 535 nC @ 10 V - 10800 pF @ 25 V - - - Chassis Mount
APT6010JLL

APT6010JLL

MOSFET N-CH 600V 47A ISOTOP

Microchip Technology
3,876 -

RFQ

APT6010JLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) - 100mOhm @ 23.5A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Chassis Mount
APT30M30JLL

APT30M30JLL

MOSFET N-CH 300V 88A ISOTOP

Microchip Technology
2,691 -

RFQ

APT30M30JLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) - 30mOhm @ 44A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7030 pF @ 25 V - - - Chassis Mount
APT6013JFLL

APT6013JFLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology
3,827 -

RFQ

APT6013JFLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) - 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V - 5630 pF @ 25 V - - - Chassis Mount
APT12057B2FLLG

APT12057B2FLLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology
3,062 -

RFQ

APT12057B2FLLG

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M120JCU2

APT20M120JCU2

MOSFET N-CH 1200V 20A SOT227

Microchip Technology
3,828 -

RFQ

APT20M120JCU2

Scheda tecnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT20M120JCU3

APT20M120JCU3

MOSFET N-CH 1200V 20A SOT227

Microchip Technology
3,956 -

RFQ

APT20M120JCU3

Scheda tecnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT30M40JVFR

APT30M40JVFR

MOSFET N-CH 300V 70A ISOTOP

Microchip Technology
3,611 -

RFQ

APT30M40JVFR

Scheda tecnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 40mOhm @ 500mA, 10V 4V @ 2.5mA 425 nC @ 10 V ±30V 10200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50N60JCCU2

APT50N60JCCU2

MOSFET N-CH 600V 50A SOT227

Microchip Technology
3,169 -

RFQ

APT50N60JCCU2

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 22.5A, 10V 3.9V @ 3mA 150 nC @ 10 V ±20V 6800 pF @ 25 V - 290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT10050JVFR

APT10050JVFR

MOSFET N-CH 1000V 19A ISOTOP

Microchip Technology
3,542 -

RFQ

APT10050JVFR

Scheda tecnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 19A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Chassis Mount
APT8020JFLL

APT8020JFLL

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology
2,983 -

RFQ

APT8020JFLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) - 220mOhm @ 16.5A, 10V 5V @ 2.5mA 195 nC @ 10 V - 5200 pF @ 25 V - - -55°C ~ 150°C (TJ) Chassis Mount
APT12057LFLLG

APT12057LFLLG

MOSFET N-CH 1200V 22A TO264

Microchip Technology
3,318 -

RFQ

APT12057LFLLG

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10045JFLL

APT10045JFLL

MOSFET N-CH 1000V 21A ISOTOP

Microchip Technology
3,641 -

RFQ

APT10045JFLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 460mOhm @ 11.5A, 10V 5V @ 2.5mA 154 nC @ 10 V - 4350 pF @ 25 V - - - Chassis Mount
APT20M20JFLL

APT20M20JFLL

MOSFET N-CH 200V 104A ISOTOP

Microchip Technology
2,251 -

RFQ

APT20M20JFLL

Scheda tecnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 104A (Tc) - 20mOhm @ 52A, 10V 5V @ 2.5mA 110 nC @ 10 V - 6850 pF @ 25 V - - - Chassis Mount
APT30M36JFLL

APT30M36JFLL

MOSFET N-CH 300V 76A ISOTOP

Microchip Technology
2,334 -

RFQ

APT30M36JFLL

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 76A (Tc) - 36mOhm @ 38A, 10V 5V @ 2.5mA 115 nC @ 10 V - 6480 pF @ 25 V - - - Chassis Mount
APT8020LFLLG

APT8020LFLLG

MOSFET N-CH 800V 38A TO264

Microchip Technology
2,914 -

RFQ

APT8020LFLLG

Scheda tecnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 38A (Tc) 10V 220mOhm @ 19A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
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